Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal-organic vapour ph... von Szyma ski, T, Wo ko, M, Wzorek, M, Paszkiewicz, B, Paszkiewicz, R

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Sonochemical growth of nanomaterials in carbon nanotube von Jesionek, M., Nowak, M., Mistewicz, K., Kępińska, M., Stróż, D., Bednarczyk, I., Paszkiewicz, R.

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Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer von Gladysiewicz, M., Janicki, L., Kudrawiec, R., Misiewicz, J., Wosko, M., Paszkiewicz, R., Paszkiewicz, B., Tłaczała, M.

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Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111) von Tarnawska, L., Giussani, A., Zaumseil, P., Schubert, M. A., Paszkiewicz, R., Brandt, O., Storck, P., Schroeder, T.

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Influence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor von Glinkowski, M., Paszkiewicz, B., Paszkiewicz, R.

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Contactless electroreflectance study of band gap renormalization for Mg-doped GaN von Kudrawiec, R, Motyka, M, Misiewicz, J, Paszkiewicz, B, Paszkiewicz, R, Tłaczała, M

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Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps von Kochowski, S., Nitsch, K., Paszkiewicz, B., Paszkiewicz, R.

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Simulations of nanograting-assisted light coupling in GaN planar waveguide von Dylewicz, R., Hogg, R. A., Airey, R., Paszkiewicz, R., Bientsman, P., Patela, S.

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Characterization of the interface and the bulk phenomena in metal-SiO2-(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures von KOCHOWSKI, S, NITSCH, K, PASZKIEWICZ, B, PASZKIEWICZ, R

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Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers von Macherzyński, W, Wośko, M, Paszkiewicz, B, Ściana, B, Paszkiewicz, R, Tłaczała, M

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Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates von Paszkiewicz, R., Paszkiewicz, B., Wosko, M., Szyszka, A., Marciniak, L., Prażmowska, J., Macherzyński, W., Serafińczuk, J., Kozłowski, J., Tlaczala, M., Kováč, J., Novotný, I., Škriniarová, J., Haško, D.

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Studies of GaAs metal–insulator–semiconductor structures by the admittance spectroscopy method von Kochowski, S., Nitsch, K., Paszkiewicz, B., Paszkiewicz, R., Szydłowski, M.

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Synthesis and properties of UV-curable poly(imideurethane) acrylates von Meledyn, M., Paszkiewicz, R., Masiulanis, B.

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Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate von Nyk, M., Kudrawiec, R., Misiewicz, J., Paszkiewicz, R., Korbutowicz, R., Kozlowski, J., Serafinczuk, J., Strek, W.

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GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayers von Podhorodecki, A., Nyk, M., Kudrawiec, R., Misiewicz, J., Paszkiewicz, R., Korbutowicz, R., Serafinczuk, J., Strek, W.

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Room temperature photoreflectance of different electron concentration GaN epitaxial layers von Kudrawiec, R, Sęk, G, Misiewicz, J, Paszkiewicz, R, Paszkiewicz, B, Tłaczała, M

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Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method von Paszkiewicz, R., Paszkiewicz, B., Kozlowski, J., Piasecki, M., Kosnikowski, W., Tlaczala, M.

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Investigation of the influence of the initial step of deposition on the properties of gallium nitride layer von Prazmowska, J, Podhorodecki, A, Korbutowicz, R, Szyszka, A, Paszkiewicz, R, Misiewicz, J, Tłaczała, M

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Properties of GaN layers deposited on AlN/sapphire template substrates von Prażmowska, J, Korbutowicz, R, Szyszka, A, Wośko, M, Serafińczuk, J, Paszkiewicz, R, Podhorodecki, A, Misiewicz, J, Kovač, J, Srnanek, R, Tłaczała, M

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Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance von Kudrawiec, R., Syperek, M., Motyka, M., Misiewicz, J., Paszkiewicz, R., Paszkiewicz, B., Tłaczała, M.

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