Photoluminescence in silicon implanted with erbium ions at an elevated temperature von Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Sakharov, V. I., Serenkov, I. T., Vdovin, V. I., Parshin, E. O., Makoviichuk, M. I.

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Structural defects and dislocation-related photoluminescence in erbium-implanted silicon von Sobolev, N.A., Emel'yanov, A.M., Shek, E.I., Sakharov, V.I., Serenkov, I.T., Nikolaev, Yu.A., Vdovin, V.I., Yugova, T.G., Makovijchuk, M.I., Parshin, E.O., Pizzini, S.

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Optical and Electrical Properties of Si:Er Light-Emitting Structures von Bresler, M.S., Sobolev, N.A., Alexandrov, O.V., Gusev, Oleg B., Shek, Elena I., Makovijchuk, M.I., Parshin, E.O.

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Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures von Emel'yanov, A.M., Nikolaev, Yu.A., Sobolev, N.A., Serenkov, I.T., Kudryavtsev, Yu.A., Makovijchuk, M.I., Parshin, E.O., Sakharov, V.I., Shtel'makh, K.F.

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METHOD FOR ION SYNTHESIS IN SILICON OF BURIED INSULATOR LAYER von MAKOVIJCHUK M.I, DENISENKO JU.I, KRIVELEVICH S.A, PARSHIN E.O

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