Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field von Yang, Tae-Youl, Park, Il-Mok, Kim, Byoung-Joon, Joo, Young-Chang

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Linewidth dependence of grain structure and stress in damascene Cu lines von Paik, Jong-Min, Park, Il-Mok, Joo, Young-Chang, Park, Ki-Chul

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Investigation of crystallization behaviors of nitrogen-doped Ge2Sb2Te5 films by thermomechanical characteristics von Park, Il-Mok, Yang, Tae-Youl, Jung, Sug Woo, Kim, Young Kuk, Horii, Hideki, Joo, Young-Chang

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Atomic migration in molten and crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} under high electric field von Yang, Tae-Youl, Park, Il-Mok, Kim, Byoung-Joon, Joo, Young-Chang

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Atomic migration in molten and crystalline Ge 2 Sb 2 Te 5 under highelectric field von Yang, Tae-Youl, Park, Il-Mok, Kim, Byoung-Joon, Joo, Young-Chang

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Thermomechanical Analysis on the Phase Stability of Nitrogen-Doped Amorphous Ge 2 Sb 2 Te 5 Films von Park, Il-Mok, Cho, Ju-Young, Yang, Tae-Youl, Park, Eun Soo, Joo, Young-Chang

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Investigation of crystallization behaviors of nitrogen-doped Ge 2 Sb 2 Te 5 films by thermomechanical characteristics von Park, Il-Mok, Yang, Tae-Youl, Jung, Sug Woo, Kim, Young Kuk, Horii, Hideki, Joo, Young-Chang

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Semiconductor device and method for fabricating the same von Park, Il Mok

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Thermomechanical properties and mechanical stresses of Ge 2Sb 2Te 5 films in phase-change random access memory von Park, Il-Mok, Jung, Jung-Kyu, Ryu, Sang-Ouk, Choi, Kyu-Jeong, Yu, Byoung-Gon, Park, Young-Bae, Han, Seung Min, Joo, Young-Chang

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von PARK, Il Mok

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Effect of Nitrogen Implantation with Low Dose on Thermomechanical Properties and Microstructure of Ge 2 Sb 2 Te 5 Films von Park, Il-Mok, Jung, Jung-Kyu, Yang, Tae-Youl, Yeom, Min Soo, Kim, Yong Tae, Joo, Young-Chang

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Memory device von Park, Il-mok, Song, Seul-ji

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Semiconductor device and method for fabricating the same von Park, Tae Jin, Park, Il Mok

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MEMORY DEVICE von Park, Il-mok, Song, Seul-ji

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Memory device and method of manufacturing the same von Park, Il-mok, Kang, Dae-hwan, Koh, Gwan-hyeob

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Memory device with memory cell pillar having resistive memory layer with wedge memory portion and body memory portion, and method of fabricating the same von Park, Il-mok, Kim, Sung-won, Park, Jong-chul, Song, Seul-ji, Jeong, Ji-hyun

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Memory device and method of manufacturing the same von Park, Il-mok, Kang, Dae-hwan, Koh, Gwan-hyeob

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MEMORY DEVICE WITH MEMORY CELL PILLAR HAVING RESISTIVE MEMORY LAYER WITH WEDGE MEMORY PORTION AND BODY MEMORY PORTION, AND METHOD OF FABRICATING THE SAME von Park, Il-mok, Kim, Sung-won, Park, Jong-chul, Song, Seul-ji, Jeong, Ji-hyun

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SEMICONDUCTOR MEMORY DEVICES von KANG Dae-Hwan, KOH Gwan-Hyeob, PARK Il-Mok

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von PARK, IL MOK

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