Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene von Kim, Jeehwan, Bayram, Can, Park, Hongsik, Cheng, Cheng-Wei, Dimitrakopoulos, Christos, Ott, John A., Reuter, Kathleen B., Bedell, Stephen W., Sadana, Devendra K.

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Physically unclonable cryptographic primitives using self-assembled carbon nanotubes von Hu, Zhaoying, Comeras, Jose Miguel M. Lobez, Park, Hongsik, Tang, Jianshi, Afzali, Ali, Tulevski, George S., Hannon, James B., Liehr, Michael, Han, Shu-Jen

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High-density integration of carbon nanotubes via chemical self-assembly von Park, Hongsik, Afzali, Ali, Han, Shu-Jen, Tulevski, George S., Franklin, Aaron D., Tersoff, Jerry, Hannon, James B., Haensch, Wilfried

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Layer-Resolved Graphene Transfer via Engineered Strain Layers von Kim, Jeehwan, Park, Hongsik, Hannon, James B., Bedell, Stephen W., Fogel, Keith, Sadana, Devendra K., Dimitrakopoulos, Christos

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Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors von Lee, Sunghwan, Song, Yang, Park, Hongsik, Zaslavsky, A., Paine, D.C.

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GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate von Lee, Chang-Ju, Won, Chul-Ho, Lee, Jung-Hee, Hahm, Sung-Ho, Park, Hongsik

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Improvement in the Performance of Sol-Gel Processed In2O3 Thin-Film Transistor Depending on Sb Dopant Concentration von Kim, Taegyun, Jang, Bongho, Jin-Hyuk Bae, Park, Hongsik, Cho, Chan Seob, Hyuk-Jun Kwon, Jang, Jaewon

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Carbon nanotube thin film transistors on flexible substrates von Chandra, Bhupesh, Park, Hongsik, Maarouf, Ahmed, Martyna, Glenn J., Tulevski, George S.

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Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer von Lee, Chang-Ju, Won, Chul-Ho, Lee, Jung-Hee, Hahm, Sung-Ho, Park, Hongsik

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Aqueous Synthesis of the Tiopronin-Capped Gold Nanoclusters/Nanoparticles with Precise Size Control via Deprotonation of the Ligand von Kang, Daekyung, Son, Changhee, Lee, Hakseon, Park, Hongsik, Kim, Taewan, Park, Jonghoo

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Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs) von Kim, Young Jo, Moon, Youngboo, Moon, Jeong Hyun, Kim, Hyoung Woo, Bahng, Wook, Park, Hongsik, Yoon, Young Jun, Seo, Jae Hwa

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High-Resolution Field Effect Sensing of Ferroelectric Charges von Ko, Hyoungsoo, Ryu, Kyunghee, Park, Hongsik, Park, Chulmin, Jeon, Daeyoung, Kim, Yong Kwan, Jung, Juhwan, Min, Dong-Ki, Kim, Yunseok, Lee, Ho Nyung, Park, Yoondong, Shin, Hyunjung, Hong, Seungbum

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Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands von Jeong-Hoon Seol, Sang-Bum Kang, Chang-Ju Lee, Chul-Ho Won, Hongsik Park, Jung-Hee Lee, Sung-Ho Hahm

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Precise determination of electric field applied to charged materials in liquid via van der Pauw technique von Noh, Hyowoong, Park, Minsu, Lee, Junyeong, Bae, Ju-Hyun, Park, Honghwi, Kang, Geeyoon, Baek, Moon-Chang, Park, Hongsik

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Scanning resistive probe microscopy: Imaging ferroelectric domains von Park, Hongsik, Jung, Juhwan, Min, Dong-Ki, Kim, Sungdong, Hong, Seungbum, Shin, Hyunjung

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High-precision extracellular-vesicle isolation-analysis integrated platform for rapid cancer diagnosis directly from blood plasma von Park, Minsu, Lee, Chan-Hyeong, Noh, Hyowoong, Kang, Geeyoon, Lee, Junyeong, Bae, Ju-Hyun, Moon, Hyeri, Park, Jonghoo, Kong, Seongho, Baek, Moon-Chang, Park, Hongsik

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Bridge-contact resistance method for precise evaluation of electrical contacts of nano-scale semiconductor devices von Yun, Jiyeong, Park, Byeong-Gyu, Jung, Huiyun, Lee, Jonghyung, Park, Youngjin, Kang, Geeyoon, Park, Honghwi, Park, Hongsik

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Compact vari-focal augmented reality display based on ultrathin, polarization-insensitive, and adaptive liquid crystal lens von Kumar, Mareddi Bharath, Kang, Daekyung, Jung, Jihoon, Park, Hongsik, Hahn, Joonku, Choi, Muhan, Bae, Jin-Hyuk, Kim, Hyunmin, Park, Jonghoo

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Influence of Amorphous-to-Crystalline Transformation on the Negative Thermo-Optic Properties of TiO2 Films von Park, Honghwi, Jung, Jaedong, Liu, Mingyuan, Lee, Sunghwan, Park, Hongsik

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Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers von Park, Honghwi, Lim, Changhee, Lee, Chang-Ju, Choi, Muhan, Jung, Sunghwan, Park, Hongsik

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