Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs von Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Rafhay, Q., Pananakakis, G., Ghibaudo, G.

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Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs von Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Pananakakis, G., Ghibaudo, G.

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Semianalytical Modeling of Short-Channel Effects in Lightly Doped Silicon Trigate MOSFETs von Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Pananakakis, G., Ghibaudo, G.

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A compact drain current model of short-channel cylindrical gate-all-around MOSFETs von Tsormpatzoglou, A, Tassis, D H, Dimitriadis, C A, Ghibaudo, G, Pananakakis, G, Clerc, R

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Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices von De Salvo, B., Ghibaudo, G., Pananakakis, G., Masson, P., Baron, T., Buffet, N., Fernandes, A., Guillaumot, B.

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Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs von Tsormpatzoglou, A., Tassis, D.H., Dimitriadis, C.A., Ghibaudo, G., Pananakakis, G., Collaert, N.

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Theory of direct tunneling current in metal–oxide–semiconductor structures von Clerc, R., Spinelli, A., Ghibaudo, G., Pananakakis, G.

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Analytical expressions for subthreshold swing in FDSOI MOS structures von Ghibaudo, G., Pananakakis, G.

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Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs von Tsormpatzoglou, A., Tassis, D.H., Dimitriadis, C.A., Ghibaudo, G., Collaert, N., Pananakakis, G.

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Reliability of charge trapping memories with high- k control dielectrics (Invited Paper) von Molas, G., Bocquet, M., Vianello, E., Perniola, L., Grampeix, H., Colonna, J.P., Masarotto, L., Martin, F., Brianceau, P., Gély, M., Bongiorno, C., Lombardo, S., Pananakakis, G., Ghibaudo, G., De Salvo, B.

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Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor von Ghibaudo, G., Pananakakis, G.

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Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length von Allibert, F., Pretet, J., Pananakakis, G., Cristoloveanu, S.

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Ionizing radiation induced leakage current on ultra-thin gate oxides von Scarpa, A., Paccagnella, A., Montera, F., Ghibaudo, G., Pananakakis, G., Ghidini, G., Fuochi, P.G.

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Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs von Tassis, D.H., Tsormpatzoglou, A., Dimitriadis, C.A., Ghibaudo, G., Pananakakis, G., Collaert, N.

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Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structures von Pananakakis, G., Ghibaudo, G., Kies, R., Papadas, C.

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Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs von Ferrier, M., Clerc, R., Lucci, L., Rafhay, Q., Pananakakis, G., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides von Monsieur, F., Vincent, E., Pananakakis, G., Ghibaudo, G.

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Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories von BOCQUET, M, MOLAS, G, TOFFOLI, A, DELEONIBUS, S, GHIBAUDO, G, PANANAKAKIS, G, DE SALVO, B, PERNIOLA, L, GARROS, X, BUCKLEY, J, GELY, M, COLONNA, J. P, GRAMPEIX, H, MARTIN, F, VIDAL, V

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Analytical modeling of organic solar cells and photodiodes von Altazin, S., Clerc, R., Gwoziecki, R., Pananakakis, G., Ghibaudo, G., Serbutoviez, C.

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On the cumulative distribution function of the defect centric model for BTI reliability von Nouguier, D., Pananakakis, G., Federspiel, X., Rafik, M., Roy, D., Ghibaudo, G.

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