Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD von Yang, Xuelin, Wu, Jiejun, Chen, Zhitao, Pan, Yaobo, Zhang, Yan, Yang, Zhijian, Yu, Tongjun, Zhang, Guoyi

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Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD von Yu, Tongjun, Pan, Yaobo, Yang, Zhijian, Xu, Ke, Zhang, Guoyi

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Magnetic and magneto-transport properties of Ga1-xMnxN grown by MOCVD von Yang, Xuelin, Chen, Zhitao, Wu, Jiejun, Pan, Yaobo, Zhang, Yan, Yang, Zhijian, Yu, Tongjun, Zhang, Guoyi

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Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers von Pan, Yaobo, Yu, Tongjun, Yang, Zhijian, Wang, Huan, Qin, Zhixin, Hu, Xiaodong, Wang, Kun, Yao, Shude, Zhang, Guoyi

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Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT-AlN interlayer von Yuebin, Tao, Zhizhong, Chen, Zhijian, Yang, Liwen, Sang, Zhitao, Chen, Ding, Li, Hao, Fang, Yaobo, Pan, Jianfeng, Yan, Guangmin, Zhu, Cheng, Chen, Shitao, Li, Maosheng, Hao, Guoyi, Zhang

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Polarization of edge emission from III-nitride light emitting diodesof emission wavelength from 395 to 455 nm von Jia, Chuanyu, Yu, Tongjun, Mu, Sen, Pan, Yaobo, Yang, Zhijian, Chen, Zhizhong, Qin, Zhixin, Zhang, Guoyi

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Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395to455nm von Jia, Chuanyu, Yu, Tongjun, Mu, Sen, Pan, Yaobo, Yang, Zhijian, Chen, Zhizhong, Qin, Zhixin, Zhang, Guoyi

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Modified transmission line model to investigate non-Ohmic contact behavior and its application on GaN von Wang, Yanjie, Chen, Weixi, Wei, Qiyuan, Chen, Weihua, Li, Rui, Pan, Yaobo, Yang, Zhijian, Zhang, Guoyi, Hu, Xiaodong

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Magnetic and magneto-transport properties of Ga 1− x Mn x N grown by MOCVD von Yang, Xuelin, Chen, Zhitao, Wu, Jiejun, Pan, Yaobo, Zhang, Yan, Yang, Zhijian, Yu, Tongjun, Zhang, Guoyi

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33 μm free standing thick film vertical structure LED made by laser lift-off von Sun, Yongjian, Qi, Shengli, Chen, Zhizhong, Kang, Xingning, Zhu, Guangmin, Chen, Cheng, Li, Shitao, Pan, Yaobo, Yan, Jianfeng, Deng, Junjing, Long, Hao, Hao, Maosheng, Yu, Tongjun, Zhang, Guoyi

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Rapid testing device for motor von PAN YAOBO, CHEN CHAOHUA

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Cooling and cleaning system of machining center von PAN YAOBO, LEI RONGCHAO

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Trolley three-dimensional storage garage von PAN YAOBO, LIU XIAOFENG

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Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT-AlN interlayer [Phys. Status Solidi C 6, No. S2, S317-S320 (2009)] von Yuebin, Tao, Zhizhong, Chen, Zhijian, Yang, Liwen, Sang, Zhitao, Chen, Ding, Li, Hao, Fang, Yaobo, Pan, Jianfeng, Yan, Guangmin, Zhu, Cheng, Chen, Shitao, Li, Maosheng, Hao, Guoyi, Zhang

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High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process von Ji, Panfeng, Yang, Xuelin, Feng, Yuxia, Cheng, Jianpeng, Zhang, Jie, Hu, Anqi, Song, Chunyan, Wu, Shan, Shen, Jianfei, Tang, Jun, Tao, Chun, Pan, Yaobo, Wang, Xinqiang, Shen, Bo

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Energy-saving automatic feeding slideway von PAN YAOBO, LIU XIAOFENG

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Universal telescopic rechargeable maintenance lamp von PAN YAOBO, LEI RONGCHAO

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Dismounting tool for bearing lock nut of main shaft of processing machine von PAN YAOBO, LIU XIAOFENG

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High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH 3 pulse flow cleaning process von Ji, Panfeng, Yang, Xuelin, Feng, Yuxia, Cheng, Jianpeng, Zhang, Jie, Hu, Anqi, Song, Chunyan, Wu, Shan, Shen, Jianfei, Tang, Jun, Tao, Chun, Pan, Yaobo, Wang, Xinqiang, Shen, Bo

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GaN-based LED (light-emitting diode) epitaxial structure suitable for high-current density and growth method thereof von TANG JUN, PAN YAOBO

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