High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers von Lichtenwalner, Daniel J., Cheng, Lin, Dhar, Sarit, Agarwal, Anant, Palmour, John W.

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Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions von Vechalapu, Kasunaidu, Bhattacharya, Subhashish, Van Brunt, Edward, Sei-Hyung Ryu, Grider, Dave, Palmour, John W.

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Structure and chemistry of passivated SiC/SiO2 interfaces von Houston Dycus, J., Xu, Weizong, Lichtenwalner, Daniel J., Hull, Brett, Palmour, John W., LeBeau, James M.

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27 kV, 20 A 4H-SiC n-IGBTs von Scozzie, Charles, Richmond, Jim, O'Loughlin, Michael J., Cheng, Lin, van Brunt, Edward, Palmour, John W., Pala, Vipindas, Tipton, Charles W.

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices von Burk, Albert, van Brunt, Edward, Sabri, Shadi, Gajewski, Donald A., Lichtenwalner, Daniel J., Hull, Brett, Allen, Scott, Leonard, Robert, Mackenzie, Andrew, Palmour, John W.

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Status and prospects for SiC power MOSFETs von Cooper, J.A., Melloch, M.R., Singh, R., Agarwal, A., Palmour, J.W.

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High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions von Schrock, James A., Ray, William B., Lawson, Kevin, Bilbao, Argenis, Bayne, Stephen B., Holt, Shad L., Lin Cheng, Palmour, John W., Scozzie, Charles

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650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout von Fetzer, Brian, Allen, Scott, Ganguly, Satyaki, Gajewski, Donald A., Ryu, Sei Hyung, Palmour, John W., Lichtenwalner, Daniel J., Woods, Callie, Hull, Brett

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Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications von Ryu, Sei Hyung, Das, Mrinal, Young, Jonathan, Hull, Brett, Gajewski, Donald A., Palmour, John W.

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High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation von Lichtenwalner, Daniel J., Pala, Vipindas, Palmour, John W., Hull, Brett, Allen, Scott

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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices von O'Loughlin, Michael, Tsvetkov, Denis, Ustin, Scott, Burk, Albert, Palmour, John W.

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Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers von Ganguly, Satyaki, van Brunt, Edward, Allen, Scott, Sabri, Shadi, Gajewski, Donald A., Lichtenwalner, Daniel J., Palmour, John W., Hull, Brett

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SiC power Schottky and PiN diodes von Singh, R., Cooper, J.A., Melloch, M.R., Chow, T.P., Palmour, J.W.

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15 kV n-GTOs in 4H-SiC von Ogunniyi, Aderinto, O’Loughlin, Michael, McCain, Matthew, Sabri, Shadi, Lemma, Yemane, Hull, Brett, Allen, Scott, Lichtenwalner, Daniel J., Richmond, Jim, Palmour, John W., Casady, Jeff, Grider, David, Capell, Craig, van Brunt, Edward, Burk, Albert A., Ryu, Sei Hyung, Jonas, Charlotte, Lelis, Aivars J., O'Brien, Heather

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Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout von McGarrity, James, Grider, David, Barbieri, Thomas, Lichtenwalner, Daniel J., Hull, Brett, Allen, Scott, Richmond, Jim, Akturk, Akin, Palmour, John W.

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4H-SiC Trench Schottky Diodes for Next Generation Products von Allen, Scott, Zhang, Qing Chun Jon, Duc, Jennifer, Palmour, John W., Hull, Brett, Mieczkowski, Van

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Insulator investigation on SiC for improved reliability von Lipkin, L.A., Palmour, J.W.

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High-Mobility SiC MOSFETs with Chemically Modified Interfaces von Agarwal, Anant K., Palmour, John W., Cheng, Lin, Dhar, Sarit, Lichtenwalner, Daniel J., Allen, Scott

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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings von Wang, Gang Yao, Scozzie, Charles, Pala, Vipindas, Sung, Woong Je, Agarwal, Anant K., Burk, Albert A., Grider, David E., Allen, Scott T., Palmour, John W., Huang, Alex Q., O'Loughlin, Michael J., Cheng, Lin, Brunt, Edward V.

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Accelerated Testing of SiC Power Devices under High-Field Operating Conditions von Sabri, Shadi, Steinmann, Philipp, Hull, Brett, Allen, Scott, Lichtenwalner, Daniel J., Richmond, Jim, Palmour, John W., Park, Jae Hyung, van Brunt, Edward, Ganguly, Satyaki, Romero, Amy, Ryu, Sei Hyung, Gajewski, Donald A.

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