193-nm lithography von Rothschild, M., Forte, A.R., Horn, M.W., Kunz, R.R., Palmateer, S.C., Sedlacek, J.H.C.

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Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique von Chao, P.C., Smith, P.M., Palmateer, S.C., Hwang, J.C.M.

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Effects of interface traps on the transconductance and drain current of InP MISFET's von Chen, C.-L., Calawa, A.R., Courtney, W.E., Mahoney, L.J., Palmateer, S.C., Manfra, M.J., Hollis, M.A.

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Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K von Pospieszalski, M.W., Weinreb, S., Pane-Chane Chao, Mishra, U.K., Palmateer, S.C., Smith, P.M., Hwang, J.C.M.

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Damascene optical waveguides von Maki, Paul A, Palmateer, Susan C

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Damascene optical waveguides von PALMATEER SUSAN C, MAKI PAUL A

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IIB-4 High responsivity homojunction GaAs triangular barrier photodiode von Barnard, J.A., Najjar, F.E., Palmateer, S.C., Hollis, M., Eastman, L.F.

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A 30-GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element von Nightingale, S.J., Upton, M.A.G., Mitchell, B.K., Mishra, U.K., Palamateer, S.C., Smith, P.M.

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