Defect bands in a-Si–Ge:H alloys with low Ge content von Palinginis, Kimon C, Cohen, J.David, Yang, Jeffrey C, Guha, Subhendu

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Defect analysis of thin film Si-based alloys deposited by hot-wire CVD using junction capacitance methods von Cohen, J. David, Datta, Shouvik, Palinginis, Kimon, Mahan, A.H., Iwaniczko, Eugene, Xu, Yueqin, Branz, Howard M.

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Experimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon von Palinginis, Kimon C., Cohen, J. David, Guha, Subhendu, Yang, Jeffrey C.

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Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloys von Cohen, J.David, Heath, Jennifer, Palinginis, Kimon, Yang, Jeffrey C, Guha, Subhendu

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Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques von Palinginis, Kimon C., Lubianiker, Yoram, Cohen, J. David, Ilie, Adelina, Kleinsorge, Britta, Milne, William I.

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Defect band distributions in hydrogenated tetrahedral amorphous carbon/crystalline silicon heterostructures von Palinginis, Kimon C., David Cohen, J., Ilie, A., Conway, N.M.J., Milne, W.I.

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Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si, Ge:H alloys von COHEN, J. David, HEATH, Jennifer, PALINGINIS, Kimon, YANG, Jeffrey C, GUHA, Subhendu

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