The surface electronic structure of silicon terminated (100) diamond von Schenk, A K, Tadich, A, Sear, M J, Qi, D, Wee, A T S, Stacey, A, Pakes, C I

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High resolution core level spectroscopy of hydrogen-terminated (1 0 0) diamond von Schenk, A K, Rietwyk, K J, Tadich, A, Stacey, A, Ley, L, Pakes, C I

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Surface transfer doping of hydrogen-terminated diamond by C60F48: energy level scheme and doping efficiency von Edmonds, M T, Wanke, M, Tadich, A, Vulling, H M, Rietwyk, K J, Sharp, P L, Stark, C B, Smets, Y, Schenk, A, Wu, Q-H, Ley, L, Pakes, C I

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Charge transfer doping of silicon von Rietwyk, K J, Smets, Y, Bashouti, M, Christiansen, S H, Schenk, A, Tadich, A, Edmonds, M T, Ristein, J, Ley, L, Pakes, C I

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Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions von Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G.

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Influence of recrystallization on stability of tungsten scanning tunneling microscope tips von Griffin, R., Chandler, H. J., Rubanov, S., Schenk, A. K., Pakes, C. I.

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Superconducting transition in Nb nanowires fabricated using focused ion beam von Tettamanzi, G C, Pakes, C I, Potenza, A, Rubanov, S, Marrows, C H, Prawer, S

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Development of a silicon–diamond interface on (111) diamond von Schenk, A. K., Sear, M. J., Dontschuk, N., Tsai, A., Rietwyk, K. J., Tadich, A., Cowie, B. C. C., Ley, L., Stacey, A., Pakes, C. I.

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Work function and electron affinity of the fluorine-terminated (100) diamond surface von Rietwyk, K. J., Wong, S. L., Cao, L., O'Donnell, K. M., Ley, L., Wee, A. T. S., Pakes, C. I.

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Oxidation of the silicon terminated (1 0 0) diamond surface von Schenk, A K, Sear, M J, Tadich, A, Stacey, A, Pakes, C I

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Progress in silicon-based quantum computing von Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.

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Work function of hydrogen-terminated diamond surfaces under ion impact von Pakes, C.I., Hoxley, D., Rubanov, S., Rabeau, J.R., Hearne, S.M., Jamieson, D.N., Prawer, S., Kalish, R.

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Single-spin readout for buried dopant semiconductor qubits von HOLLENBERG, L. C. L, WELLARD, C. J, PAKES, C. I, FOWLER, A. G

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Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond von Edmonds, M. T., Pakes, C. I., Mammadov, S., Zhang, W., Tadich, A., Ristein, J., Ley, L.

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Single-qubit operations on the Kane quantum computer von Wellard, C J, Hollenberg, L C L, Pakes, C I

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Transport behaviour of boron delta-doped diamond von Scharpf, J., Denisenko, A., Pakes, C. I., Rubanov, S., Bergmaier, A., Dollinger, G., Pietzka, C., Kohn, E.

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Charge-induced distortion and stabilization of surface transfer doped porphyrin films von Smets, Y, Stark, C B, Lach, S, Schmitt, F, Wright, C A, Wanke, M, Ley, L, Ziegler, C, Pakes, C I

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Work function, band bending, and electron affinity in surface conducting (100) diamond von Edmonds, M. T., Pakes, C. I., Mammadov, S., Zhang, W., Tadich, A., Ristein, J., Ley, L.

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Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures von Pakes, C I, George, D P, Jamieson, D N, Yang, C J, Dzurak, A S, Gauja, E, Clark, R G

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Single atom Si nanoelectronics using controlled single-ion implantation von Mitic, M., Andresen, S.E., Yang, C., Hopf, T., Chan, V., Gauja, E., Hudson, F.E., Buehler, T.M., Brenner, R., Ferguson, A.J., Pakes, C.I., Hearne, S.M., Tamanyan, G., Reilly, D.J., Hamilton, A.R., Jamieson, D.N., Dzurak, A.S., Clark, R.G.

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