Formation of octahedral corrosion products in Sn–Ag flip chip solder bump von Kang, Hanbyul, Lee, Miji, Sun, Dongyoon, Pae, Sangwoo, Park, Jongwoo

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Investigation of asymmetric degradation in electrical properties of a-InGaZnO thin-film transistor arrays as a function of channel width-to-length aspect ratio von Agrawal, Khushabu, Patil, Vilas, Chavan, G. T., Yoon, Geonju, Kim, Jaemin, Park, Jinsu, Pae, Sangwoo, Kim, JinSeok, Cho, Eun-Chel, Yi, Junsin

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Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry von Yonghun Kim, Young Gon Lee, Ukjin Jung, Jin Ju Kim, Minhyeok Choe, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park, Byoung Hun Lee

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New Insight Into Negative Bias Temperature Instability Degradation During Self-Heating in Nanoscale Bulk FinFETs von Son, Dokyun, Hong, Kyushik, Shim, Hyewon, Pae, Sangwoo, Shin, Hyungcheol

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Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics von Kim, Jaemin, Park, Jinsu, Yoon, Geonju, Khushabu, Agrawal, Kim, Jin-Seok, Pae, Sangwoo, Cho, Eun-Chel, Yi, Junsin

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Frequency and recovery effects in high-κ BTI degradation von Ramey, S., Prasad, C., Agostinelli, M., Sangwoo Pae, Walstra, S., Gupta, S., Hicks, J.

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Effects of N-Rich TiN Capping Layer on Reliability in Gate-Last High-k/Metal Gate MOSFETs von Bae, Kidan, Lee, Kyung Taek, Sagong, Hyun Chul, Choe, Minhyeok, Lee, Hyunwoo, Kim, Sungeun, Kim, Kwang-Soo, Park, Junekyun, Pae, Sangwoo, Park, Jongwoo

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Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology von Sangwoo Pae, Ashok, Ashwin, Jingyoo Choi, Ghani, T, Jun He, Seok-hee Lee, Lemay, K, Liu, M, Lu, R, Packan, P, Parker, C, Purser, R, St. Amour, Anthony, Woolery, B

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Technology Scaling Trend of Soft Error Rate in Flip-Flops in [Formula Omitted] nm Bulk FinFET Technology von Uemura, Taiki, Lee, Soonyoung, Monga, Udit, Choi, Jaehee, Lee, Seungbae, Pae, Sangwoo

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Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect von An, Byeong-Seon, Kwon, Yena, Oh, Jin-Su, Lee, Changmin, Choi, Seongheum, Kim, Hyoungsub, Lee, Miji, Pae, Sangwoo, Yang, Cheol-Woong

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Enhanced Reliability of 7-nm Process Technology Featuring EUV von Choi, Kihyun, Shim, Hyewon, Park, Junekyun, Cho, Youngwoo, Rhee, Hwasung, Pae, Sangwoo, Sagong, Hyun Chul, Kang, Wonchang, Kim, Hyunjin, Hai, Jiang, Lee, Miji, Kim, Bomi, Lee, Mi-Ji, Lee, Soonyoung

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At speed HTOL test for reliability qualification of high speed mobile applications von Jongwoo Park, Da Ahn, Donghee Lee, Jang, E.-S, Wooyeon Kim, Sangchul Shin, Gunrae Kim, Nae-In Lee, Sangwoo Pae

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Amorphous TaxMnyOz Layer as a Diffusion Barrier for Advanced Copper Interconnects von An, Byeong-Seon, Kwon, Yena, Oh, Jin-Su, Lee, Miji, Pae, Sangwoo, Yang, Cheol-Woong

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Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack von Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo

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Technology Scaling Trend of Soft Error Rate in Flip-Flops in 1\times nm Bulk FinFET Technology von Uemura, Taiki, Lee, Soonyoung, Monga, Udit, Choi, Jaehee, Lee, Seungbae, Pae, Sangwoo

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Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack von Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo

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Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth von Sangwoo Pae, Taichi Su, Denton, J.P., Neudeck, G.W.

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Amorphous Ta x Mn y O z Layer as a Diffusion Barrier for Advanced Copper Interconnects von An, Byeong-Seon, Kwon, Yena, Oh, Jin-Su, Lee, Miji, Pae, Sangwoo, Yang, Cheol-Woong

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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME von LEE, Seonhaeng, LEE, NAMHYUN, PAE, SANGWOO

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SEMICONDUCTOR DEVICE von Lee, Seonhaeng, Lee, Namhyun, Pae, Sangwoo

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