Valley Filtering and Electronic Optics Using Polycrystalline Graphene von Nguyen, V Hung, Dechamps, S, Dollfus, P, Charlier, J-C

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Enhanced thermoelectric figure of merit in vertical graphene junctions von Hung Nguyen, V., Nguyen, M. Chung, Nguyen, Huy-Viet, Saint-Martin, J., Dollfus, P.

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Negative differential resistance in zigzag-edge graphene nanoribbon junctions von Nam Do, V., Dollfus, P.

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Transport gap in vertical devices made of incommensurately misoriented graphene layers von Nguyen, V Hung, Dollfus, P

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Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures von Hung Nguyen, V., Chung Nguyen, M., Nguyen, Huy-Viet, Dollfus, P.

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Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings von Nguyen, V. Hung, Niquet, Y. M., Dollfus, P.

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Resonant tunnelling diodes based on graphene/h-BN heterostructure von Nguyen, V Hung, Mazzamuto, F, Bournel, A, Dollfus, P

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Heat transfer in rough nanofilms and nanowires using full band ab initio Monte Carlo simulation von Davier, B, Larroque, J, Dollfus, P, Chaput, L, Volz, S, Lacroix, D, Saint-Martin, J

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Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions von Logoteta, D., Cao, J., Pala, M., Dollfus, P., Lee, Y., Iannaccone, G.

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Improved performance of graphene transistors by strain engineering von Nguyen, V Hung, Nguyen, Huy-Viet, Dollfus, P

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Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation von Le, N. D., Davier, B., Izitounene, N., Dollfus, P., Saint-Martin, J.

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Strong negative differential conductance in strained graphene devices von Chung Nguyen, M., Hung Nguyen, V., Nguyen, Huy-Viet, Dollfus, P.

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Transport properties through graphene grain boundaries: strain effects versus lattice symmetry von Hung Nguyen, V, Hoang, Trinh X, Dollfus, P, Charlier, J-C

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Full-Band modelling of phonons in polytype Ge and Si von Larroque, J., Dollfus, P., Saint-Martin, J.

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Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder von Querlioz, D., Apertet, Y., Valentin, A., Huet, K., Bournel, A., Galdin-Retailleau, S., Dollfus, P.

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On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation von Querlioz, D., Saint-Martin, J., Huet, K., Bournel, A., Aubry-Fortuna, V., Chassat, C., Galdin-Retailleau, S., Dollfus, P.

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Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design von Fregonese, Sebastien, Cazin d'Honincthun, Hugues, Goguet, Johnny, Maneux, Cristell, Zimmer, Thomas, Bourgoin, Jean-Philippe, Dollfus, Philippe, Galdin-Retailleau, Sylvie

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Conduction gap in graphene strain junctions: direction dependence von Nguyen, M Chung, Nguyen, V Hung, Nguyen, Huy-Viet, Dollfus, P

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Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures von Nam Do, V., Nguyen, V. Hung, Dollfus, P., Bournel, A.

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New insights into self-heating in double-gate transistors by solving Boltzmann transport equations von Thu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P.

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