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    Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO films grown on 4H-SiC

    Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO films grown on 4H-SiC von Kami ski, Pawe, Budzich, Rafa, Gaca, Jaros aw, Micha owski, Pawe Piotr, Koz owski, Roman, Harmasz, Anna, Ciuk, Tymoteusz, P ocharski, Janusz


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