Electrochemical corrosion behavior of amorphous carbon nitride thin films von Marton, M., Kovalčík, D., Vojs, M., Zdravecká, E., Varga, M., Michalíková, L., Veselý, M., Redhammer, R., Písečný, P.

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Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study von Slugeň, V., Harmatha, L., Ťapajna, M., Ballo, P., Písečný, P., Šik, J., Kögel, G., Kršjak, V.

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Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition von Frohlich, K., Luptak, R., Dobrocka, E., Husekova, K., Cico, K., Rosova, A., Lukosius, M., Abrutis, A., Pisecny, P., Espinos, J.P.

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Radiation Hardness of MOS Structures Exposed to High-Energy Ions von Harmatha, Ladislav, Stuchlikova, Lubica, Písečný, P

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Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology von Pisecny, P., Husekova, K., Frohlich, K., Harmatha, L., Soltys, J., Machajdik, D., Espinos, J.P., Jergel, M., Jakabovic, J.

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Application of Ru-based gate materials for CMOS technology von T˘apajna, M., Písec˘ny, P., Lupták, R., Hus˘eková, K., Fröhlich, K., Harmatha, L., Hooker, J.C., Roozeboom, F., Jergel, J.

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Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study von Harmatha, L., Ťapajna, M., Slugeň, V., Ballo, P., Písečný, P., Šik, J., Kögel, G.

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Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon von Harmatha, Ladislav, Ballo, Peter, Breza, Juraj, Pisecny, Pavol, Tapajna, Milan

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