Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates von Pérez-Tomás, A., Fontserè, A., Llobet, J., Placidi, M., Rennesson, S., Baron, N., Chenot, S., Moreno, J. C., Cordier, Y.

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Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors von Pérez-Tomás, A., Brosselard, P., Godignon, P., Millán, J., Mestres, N., Jennings, M. R., Covington, J. A., Mawby, P. A.

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GaN transistor characteristics at elevated temperatures von Pérez-Tomás, A., Placidi, M., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Constant, A., Godignon, P., Millán, J.

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High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon von Sharma, Y. K., Li, F., Jennings, M. R., Fisher, C. A., Pérez-Tomás, A., Thomas, S., Hamilton, D. P., Russell, S. A. O., Mawby, P. A.

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Efficient CT Image Reconstruction in a GPU Parallel Environment von Valencia Pérez, Tomás A, Hernández López, Javier M, Moreno-Barbosa, Eduardo, de Celis Alonso, Benito, Palomino Merino, Martín R, Castaño Meneses, Victor M

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Characterization and modeling of n-n Si∕SiC heterojunction diodes von Pérez-Tomás, A., Jennings, M. R., Davis, M., Covington, J. A., Mawby, P. A., Shah, V., Grasby, T.

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Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC von Pérez-Tomás, A., Fontserè, A., Jennings, M.R., Gammon, P.M.

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GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling von Pérez-Tomás, A., Placidi, M., Perpiñà, X., Constant, A., Godignon, P., Jordà, X., Brosselard, P., Millán, J.

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Temperature impact and analytical modeling of the AlGaN GaN-on-Si saturation drain current and transconductance von Pérez-Tomás, A, Fontserè, A, Placidi, M, Baron, N, Chenot, S, Moreno, J C, Cordier, Y

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Analysis of inhomogeneous Ge/SiC heterojunction diodes von Gammon, P. M., Pérez-Tomás, A., Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, J. A., Mawby, P. A.

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Si/SiC bonded wafer: A route to carbon free SiO2 on SiC von Pérez-Tomás, A., Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, J. A., Burrows, S. E., Mawby, P. A.

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A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface von Pérez-Tomás, A., Godignon, P., Mestres, N., Millán, J.

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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift von Brosselard, P, Pérez-Tomás, A, Hassan, J, Camara, N, Jordà, X, Vellvehí, M, Godignon, P, Millán, J, Bergman, J P

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Schottky versus bipolar 3.3 kV SiC diodes von Pérez-Tomás, A, Brosselard, P, Hassan, J, Jordà, X, Godignon, P, Placidi, M, Constant, A, Millán, J, Bergman, J P

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Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs von Fontserè, A., Pérez-Tomás, A., Godignon, P., Millán, J., De Vleeschouwer, H., M. Parsey, J., Moens, P.

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Gaussian distribution of inhomogeneous nickel-vanadium Schottky interface on silicon (100) von Soltani, S, Gammon, P M, Pérez-Tomas, A, Ferhat Hamida, A, Terchi, Y

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Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN von Fontserè, A., Pérez-Tomás, A., Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Gammon, P. M., Jennings, M. R., Porti, M., Bayerl, A., Lanza, M., Nafría, M.

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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes von Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M.R., Russell, S.O., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F.H., Sandana, V.E., Bove, P., Rogers, D.J.

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Effects of Photons on 4H-SiC Rapid Thermal Oxidation Using Nitrous Oxide Gas von Constant, A., Camara, N., Godignon, P., Placidi, M., Pérez-Tomás, A., Camassel, J.

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Cryogenic characterisation and modelling of commercial SiC MOSFETs von Woodend, L. J., Gammon, P. M., Shah, V. A., Pérez-Tomás, A., Li, F., Hamilton, D. P., Myronov, M., Mawby, P. A.

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