Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe von Passler, R

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Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb von Pässler, R.

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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials von Pässler, R.

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Representative hybrid model used for analyses of heat capacities of group-IV, III-V, and II-VI materials von Pssler, R

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Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots von ORTNER, G, SCHWAB, M, BAYER, M, PÄSSLER, R, FAFARD, S, WASILEWSKI, Z, HAWRYLAK, P, FORCHEL, A

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Temperature dependence of fundamental band gaps in group IV, III–V, and II–VI materials via a two-oscillator model von Passler, R.

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Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN von Pässler, R.

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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials: Limiting Debye temperature behavior detected from cryogeni... von Pässler, R.

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Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors von P ssler, R.

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Optical cross sections of deep levels in 4H-SiC von Kato, M., Tanaka, S., Ichimura, M., Arai, E., Nakamura, S., Kimoto, T., Pässler, R.

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Characteristic non-Debye heat capacity formula applied to GaN and ZnO von Pässler, R.

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Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials von Pässler, R.

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Non-Debye behaviours of heat capacities of cubic II–VI materials von Paessler, R

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Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors von P ssler, R.

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Temperature dependence of exciton peak energies in multiple quantum wells von Pässler, R.

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Dispersion-related description of temperature dependencies of band gaps in semiconductors von Pässler, Roland

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Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films von Pässler, R., Griebl, E., Riepl, H., Lautner, G., Bauer, S., Preis, H., Gebhardt, W., Buda, B., As, D. J., Schikora, D., Lischka, K., Papagelis, K., Ves, S.

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Practicable Method for Estimating Thermal Depths from Phonon-Broadened Photoexcitation Cross-Section Bands. III. Generalization for Charged Centres von Pässler, R.

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Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors von Pässler, Roland

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Alternative Way for Detecting Franck-Condon Shifts from Thermally Broadened Photoneutralization Cross-Section Bands of Deep Traps in Semiconductors von Pässler, R.

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