High-Yield Electrochemical Production of Formaldehyde from CO2 and Seawater von Nakata, Kazuya, Ozaki, Takuya, Terashima, Chiaki, Fujishima, Akira, Einaga, Yasuaki

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InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates von Ozaki, Takuya, Funato, Mitsuru, Kawakami, Yoichi

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Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates von Ozaki, Takuya, Takagi, Yoshinori, Nishinaka, Junichi, Funato, Mitsuru, Kawakami, Yoichi

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Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy von Shiojima, Kenji, Suemitsu, Tetsuya, Ozaki, Takuya, Samukawa, Seiji

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Low-temperature InGaAs oxidation using oxygen neutral beam von Lee, Chang-Yong, Higo, Akio, Thomas, Cédric, Okada, Takeru, Ozaki, Takuya, Sugiyama, Masakazu, Nakano, Yoshiaki, Samukawa, Seiji

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Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars von Higo, Akio, Kiba, Takayuki, Chen, Shula, Chen, Yafeng, Tanikawa, Tomoyuki, Thomas, Cedric, Lee, Chang Yong, Lai, Yi-Chun, Ozaki, Takuya, Takayama, Junichi, Yamashita, Ichiro, Murayama, Akihiro, Samukawa, Seiji

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Red-emitting In x Ga 1− x N/In y Ga 1− y N quantum wells grown on lattice-matched In y Ga 1− y N/ScAlMgO 4 (0001) templates von Ozaki, Takuya, Funato, Mitsuru, Kawakami, Yoichi

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50 nm gate electrode patterning using a neutral-beam etching system von Noda, Shuichi, Nishimori, Hirotomo, Ida, Tohru, Arikado, Tsunetoshi, Ichiki, Katsunori, Ozaki, Takuya, Samukawa, Seiji

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Red-emitting InxGa1−xN/InyGa1−yN quantum wells grown on lattice-matched InyGa1−yN/ScAlMgO4(0001) templates von Ozaki, Takuya, Funato, Mitsuru, Kawakami, Yoichi

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High-Yield Electrochemical Production of Formaldehyde from CO2 and Seawater von Nakata, Kazuya, Ozaki, Takuya, Terashima, Chiaki, Fujishima, Akira, Einaga, Yasuaki

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Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition von Ge, Beibei, Ohori, Daisuke, Chen, Yi-Ho, Ozaki, Takuya, Endo, Kazuhiko, Li, Yiming, Tarng, Jenn-Hwan, Samukawa, Seiji

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Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching von Noda, Shuichi, Ozaki, Takuya, Samukawa, Seiji

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Enantioselective direct aminalization with primary carboxamides catalyzed by chiral ammonium 1,1'-binaphthyl-2,2'-disulfonates von Hatano, Manabu, Ozaki, Takuya, Sugiura, Yoshihiro, Ishihara, Kazuaki

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Highly selective low-damage processes using advanced neutral beams for porous low- k films von Ohtake, Hiroto, Inoue, Nobuhiko, Ozaki, Takuya, Samukawa, Seiji, Soda, Eiichi, Inukai, Kazuaki

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Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam von Ohori, Daisuke, Fujii, Takuya, Noda, Shuichi, Mizubayashi, Wataru, Endo, Kazuhiko, Lee, En-Tzu, Li, Yiming, Lee, Yao-Jen, Ozaki, Takuya, Samukawa, Seiji

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Synthesis of Optically Pure 3,3′-Diaryl Binaphthyl Disulfonic Acids via Stepwise N–S Bond Cleavage von Hatano, Manabu, Ozaki, Takuya, Nishikawa, Keisuke, Ishihara, Kazuaki

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Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition von Chen, Hua-Hsuan, Toko, Susumu, Ohori, Daisuke, Ozaki, Takuya, Utsuno, Mitsuya, Kubota, Tomohiro, Nozawa, Toshihisa, Samukawa, Seiji

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71‐1: Invited Paper: GaN‐Based Watt‐Class High‐Power Edge‐Emitting Lasers and Milliwatt‐Class Vertical‐Cavity Surface‐Emitting Lasers von Ozaki, Takuya, Okahisa, Eiichiro, Masui, Shingo, Yanamoto, Tomoya, Nagahama, Shin-ichi

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Atomic layer defect-free etching for germanium using HBr neutral beam von Fujii, Takuya, Ohori, Daisuke, Noda, Shuichi, Tanimoto, Yosuke, Sato, Daisuke, Kurihara, Hideyuki, Mizubayashi, Wataru, Endo, Kazuhiko, Li, Yiming, Lee, Yao-Jen, Ozaki, Takuya, Samukawa, Seiji

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Development of Remote Laser Welding Method Using Long Focal-Distance Lens for Automobile Galvannealed Steel von SHINOZAKI, Kenji, YAMAMOTO, Motomichi, MORINAGA, Kenta, YAGI, Daisuke, KATAKAMI, Yusuke, OZAKI, Takuya

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