Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si₂Cl₆ and NH₃ Plasma von Ovanesyan, Rafaiel A, Hausmann, Dennis M, Agarwal, Sumit

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Surface reactions of aminosilane precursors during N2 plasma‐assisted atomic layer deposition of SiNx von Leick, Noemi, Huijs, Jochem M.M., Ovanesyan, Rafaiel A., Hausmann, Dennis M., Agarwal, Sumit

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Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook von Ovanesyan, Rafaiel A., Filatova, Ekaterina A., Elliott, Simon D., Hausmann, Dennis M., Smith, David C., Agarwal, Sumit

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Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics von Ovanesyan, Rafaiel A., Hausmann, Dennis M., Agarwal, Sumit

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A Three-Step Atomic Layer Deposition Process for SiN x Using Si 2 Cl 6 , CH 3 NH 2 , and N 2 Plasma von Ovanesyan, Rafaiel A, Hausmann, Dennis M, Agarwal, Sumit

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A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma von Ovanesyan, Rafaiel A, Hausmann, Dennis M, Agarwal, Sumit

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Atomic Layer Deposition of SiC x N y Using Si 2 Cl 6 and CH 3 NH 2 Plasma von Ovanesyan, Rafaiel A., Leick, Noemi, Kelchner, Kathryn M., Hausmann, Dennis M., Agarwal, Sumit

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Surface reactions of aminosilane precursors during N 2 plasma‐assisted atomic layer deposition of SiN x von Leick, Noemi, Huijs, Jochem M.M., Ovanesyan, Rafaiel A., Hausmann, Dennis M., Agarwal, Sumit

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Low-Temperature Conformal Atomic Layer Deposition of SiN x Films Using Si 2 Cl 6 and NH 3 Plasma von Ovanesyan, Rafaiel A., Hausmann, Dennis M., Agarwal, Sumit

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Atomic Layer Deposition of SiC x N y Using Si2Cl6 and CH3NH2 Plasma von Ovanesyan, Rafaiel A, Leick, Noemi, Kelchner, Kathryn M, Hausmann, Dennis M, Agarwal, Sumit

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Low-Temperature Conformal Atomic Layer Deposition of SiN x Films Using Si2Cl6 and NH3 Plasma von Ovanesyan, Rafaiel A, Hausmann, Dennis M, Agarwal, Sumit

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