Optical, electrical and structural properties of nano-pyramidal ZnO films grown on glass substrate by spray pyrolysis technique von Bedia, A., Bedia, F.Z., Aillerie, M., Maloufi, N., Ould Saad Hamady, S., Perroud, O., Benyoucef, B.

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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates von Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N.

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GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 von Gautier, S., Sartel, C., Ould-Saad, S., Martin, J., Sirenko, A., Ougazzaden, A.

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Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy von OULD SAAD HAMADY, S, DUPUIS, N, DECOBERT, J, OUGAZZADEN, A

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Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy von Baghdadli, T., Hamady, S. Ould Saad, Gautier, S., Moudakir, T., Benyoucef, B., Ougazzaden, A.

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Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I– V measurements von Reis, F.T., Mencaraglia, D., Ould Saad, S., Séguy, I., Oukachmih, M., Jolinat, P., Destruel, P.

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Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy von Goh, W. H., Martin, J., Ould-Saad, S., Gautier, S., Sirenko, A. A., Martinez, A., Le Gratiet, L., Ramdane, A., Maloufi, N., Ougazzaden, A.

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Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications von Heiser, T., Adamopoulos, G., Brinkmann, M., Giovanella, U., Ould-Saad, S., Brochon, C., van de Wetering, K., Hadziioannou, G.

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Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices von Adamopoulos, G., Heiser, T., Giovanella, U., Ould-Saad, S., van de Wetering, K.I., Brochon, C., Zorba, T., Paraskevopoulos, K.M., Hadziioannou, G.

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Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases von Mencaraglia, D., Ould Saad, S., Djebbour, Z.

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MOVPE growth study of BxGa(1−x)N on GaN template substrate von Gautier, S., Sartel, C., Ould Saad Hamady, S., Maloufi, N., Martin, J., Jomard, F., Ougazzaden, A.

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Raman scattering study of BxGa1-xN growth on AlN template substrate von Ould Saad Hamady, S., Baghdadli, T., Gautier, S., Bouchaour, M., Martin, J., Ougazzaden, A.

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Interface state effects in GaN Schottky diodes von Ahaitouf, A., Srour, H., Hamady, S. Ould Saad, Fressengeas, N., Ougazzaden, A., Salvestrini, J.P.

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Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations von Canava, B., Vigneron, J., Etcheberry, A., Guimard, D., Grand, P.P., Guillemoles, J.-F., Lincot, D., Ould Saad Hamatly, S., Djebbour, Z., Mencaraglia, D.

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Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen von Sartel, C., Gautier, S., Ould Saad Hamady, S., Maloufi, N., Martin, J., Sirenko, A., Ougazzaden, A.

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XPS and electrical studies of buried interfaces in Cu(In,Ga)Se2 solar cells von Canava, B, Vigneron, J, Etcheberry, A, Guimard, D, Guillemoles, J.-F, Lincot, D, Ould Saad Hamatly, S, Djebbour, Z, Mencaraglia, D

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Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells von Bouzaki, Mohammed Moustafa, Aillerie, Michel, Hamady, Sidi Ould Saad, Chadel, Meriem, Benyoucef, Boumediene

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Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors von Hamady, Sidi Ould Saad

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Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases von Mencaraglia, D, Ould Saad, S, Djebbour, Z

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GaN materials growth by MOVPE in a new-design reactor using DMHy and NH 3 von Gautier, S., Sartel, C., Ould-Saad, S., Martin, J., Sirenko, A., Ougazzaden, A.

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