Graft tension and knee stability after anterior cruciate ligament reconstruction von YOSHIYA, Shinichi, KUROSAKA, Masahiro, OUCHI, Kiyoshi, KURODA, Ryosuke, MIZUNO, Kosaku

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Clinical and radiologic features of lumbar spinal stenosis and disc herniation with neuropathic bladder von INUI, Yoshihiro, DOITA, Minoru, OUCHI, Kiyoshi, TSUKUDA, Masanori, FUJITA, Naoki, KUROSAKA, Masahiro

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GAS-SOURCE MOLECULAR BEAM EPITAXY GROWTH OF METAMORPHIC InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP HIGH-ELECTRON-MOBILITY STRUCTURES ON GaAs SUBSTRATES von Ouchi, K, Mishima, T, Kudo, M, Ohta, H

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In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor von Tsuchiya, Tomonobu, Kitatani, Takeshi, Ouchi, Kiyoshi, Sato, Hiroshi, Aoki, Masahiko

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Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates von Kudo, Makoto, Ouchi, Kiyoshi, Kasai, Jun-ichi, Mishima, Tomoyoshi

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Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base von Oka, Tohru, Ouchi, Kiyoshi, Mochizuki, Kazuhiro

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Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates von Kudo, Makoto, Ouchi, Kiyoshi, Kasai, Jun-ichi, Mishima, Tomoyoshi

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Fully strained heavily carbon-doped GaAs grown by gas-source molecular beam epitaxy using carbontetrabromide and its application to InGaP/GaAs heterojunction bipolar transistors von OUCHI, K, MISHIMA, T, MOCHIZUKI, K, OKA, T, TANOUE, T

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A WSi base electrode and a heavily-doped thin base layer for high-speed and low-power InGaP/GaAs HBTs von OKA, T, OUCHI, K, MOCHIZUKI, K, NAKAMURA, T

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Conduction mechanism in indium tin oxide/electroinactive polypyrrole/indium tin oxide sandwich structures von Osaka, Tetsuya, Fukuda, Toshihiro, Ouchi, Kiyoshi, Momma, Toshiyuki

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FLEXIBLE DISPLAY DEVICE von OUCHI KIYOSHI

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DISPLAY DEVICE von OUCHI KIYOSHI

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Very-high-speed InP/InGaAs HBT ICs for optical transmission systems von Suzuki, H., Watanabe, K., Ishikawa, K., Masuda, H., Ouchi, K., Tanoue, T., Takeyari, R.

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Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In 0.5 Al 0.5 As/In 0.5 Ga 0.5 As/InAsP High-Electron-Mobility Structures on GaAs Substrates von Ouchi, Kiyoshi, Mishima, Tomoyoshi, Kudo, Makoto, Ohta, Hiroshi

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Spectral characteristics of an InP/InGaAs distributed absorbing Bragg reflector von Ogawa, Kensuke, Matsui, Yasuhiro, Itatani, Taro, Ouchi, Kiyoshi

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Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector von Ogawa, Kensuke, Matsui, Yasuhiro, Itatani, Taro, Ouchi, Kiyoshi

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Image display device and manufacturing method of the same von Muneyoshi, Takahiko, Ouchi, Kiyoshi

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Image display device and manufacturing method of the same von OUCHI KIYOSHI, MUNEYOSHI TAKAHIKO

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Image Display Device and Manufacturing Method of the Same von OUCHI KIYOSHI, MUNEYOSHI TAKAHIKO

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SEMICONDUCTOR MANUFACTURING APPARATUS MANAGEMENT SYSTEM AND METHOD THEREFOR von KONISHI KUMIKO, OKUYAMA YUTAKA, KOBAYASHI KEISUKE, MORI YUKI, OUCHI KIYOSHI, SHIMA AKIO, ONO TOSHIYUKI

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