ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT von Aubry, R., Jacquet, J. C., Oualli, M., Patard, O., Piotrowicz, S., Chartier, E., Michel, N., Trinh Xuan, L., Lancereau, D., Potier, C., Magis, M., Gamarra, P., Lacam, C., Tordjman, M., Jardel, O., Dua, C., Delage, S. L.

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz von Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.

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Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate von Rossetto, I., Rampazzo, F., Silvestri, R., Zanandrea, A., Dua, C., Delage, S., Oualli, M., Meneghini, M., Zanoni, E., Meneghesso, G.

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Iliopoulos, E., Georgakilas, A., Kominou, P., Guziewicz, M., Kaminska, E., Piotrowska, A., Gaquière, C., Oualli, M., Chartier, E., Morvan, E., Delage, S.

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Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes von Oualli, M., Dua, C., Patard, O., Altuntas, P., Piotrowicz, S., Gamarra, P., Lacam, C., Jacquet, J.-C., Teisseire, L., Lancereau, D., Chartier, E., Potier, C., Delage, S.L.

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Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs von Malbert, N, Labat, N, Curutchet, A, Sury, C, Hoel, V, de Jaeger, J.-C, Defrance, N, Douvry, Y, Dua, C, Oualli, M, Piazza, M, Bru-Chevallier, C, Bluet, J.-M, Chikhaoui, W

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Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs von Rossetto, I., Rampazzo, F., Gerardin, S., Meneghini, M., Bagatin, M., Zanandrea, A., Dua, C., di Forte-Poisson, M.-A., Aubry, R., Oualli, M., Delage, S.L., Paccagnella, A., Meneghesso, G., Zanoni, E.

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Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs von Malbert, N., Labat, N., Curutchet, A., Sury, C., Hoel, V., de Jaeger, J.-C., Defrance, N., Douvry, Y., Dua, C., Oualli, M., Bru-Chevallier, C., Bluet, J.-M., Chikhaoui, W.

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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process von Jardel, Olivier, Callet, Guillaume, Dufraisse, Jérémy, Piazza, Michele, Sarazin, Nicolas, Chartier, Eric, Oualli, Mourad, Aubry, Raphaël, Reveyrand, Tibault, Jacquet, Jean-Claude, Di Forte Poisson, Marie-Antoinette, Morvan, Erwan, Piotrowicz, Stéphane, Delage, Sylvain L.

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160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management von Piotrowicz, S., Jardel, O., Jacquet, J.-C, Lancereau, D., Aubry, R., Morvan, E., Sarazin, N., Dufraisse, J., Dua, C., Oualli, M., Chartier, E., Poisson, M. A. Di-Forte, Gaquière, C., Delage, S. L.

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First demonstration of AlInN/GaN HEMTs amplifiers at K band von Jardel, O., Callet, G., Lancereau, D., Jacquet, J-C., Reveyrand, T., Sarazin, N., Aubry, R., Leger, S., Chartier, E., Oualli, M., Dua, C., Piotrowicz, S., Morvan, E., Di Forte Poisson, M.A., Delage, S.L.

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Development of InAlN/GaN HEMTs Power Devices in S-Band von Piotrowicz, S., Chartier, E., Jardel, O., Dufraisse, J., Callet, G., Jacquet, J.-C, Lancereau, D., Morvan, E., Aubry, R., Sarazin, N., Dua, C., Oualli, M., Poisson, M. A. Di-Forte, Delage, S. L.

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Characterisation and modelling of parasitic effects and failure mechanisms in A1GaN/GaN HEMTs von MALBERT, N, LABAT, N, BRU-CHEVALLIER, C, BLUET, J.-M, CHIKHAOUI, W, CURUTCHET, A, SURY, C, HOEL, V, DE JAEGER, J.-C, DEFRANCE, N, DOUVRY, Y, DUA, C, OUALLI, M

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Performances of AlInN/GaN HEMTs for power applications at microwave frequencies von Jardel, O, Callet, G, Dufraisse, J, Sarazin, N, Chartier, E, Reveyrand, T, Oualli, M, Lancereau, D, Di Forte Poisson, M A, Piotrowicz, S, Morvan, E, Delage, S L

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Temperature dependent degradation modes in AlGaN/GaN HEMTs von Douvry, Y, Hoel, V, De Jaeger, J, Defrance, N, Sury, C, Malbert, N, Labat, N, Curutchet, A, Dua, C, Oualli, M, Piazza, M, Bluet, J, Chikhaoui, W, Bru-Chevallier, C

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Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-Band von Piotrowicz, S., Mallet-Guy, B., Chartier, E., Jacquet, J.C., Jardel, O., Lancereau, D., Le Coustre, G., Morvan, E., Aubry, R., Dua, C., Oualli, M., Richard, M., Sarazin, N., diForte-Poisson, M.A., Delaire, J., Mancuso, Y., Delage, S.L.

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Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band von Piotrowicz, S., Mallet-Guy, B., Chartier, E., Jacquet, J.C., Jardel, O., Lancereau, D., Le Coustre, G., Morvan, E., Aubry, R., Dua, C., Oualli, M., Richard, M., Sarazin, N., diForte-Poisson, M.A., Delaire, J., Mancuso, Y., Delage, S.L.

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Mechanism of Vortices Appearance in the Taylor-Couette Flow System von Khirennas, M, Oualli, H, Mekadem, M, Azzam, T, Benaiche, A, Bouabdallah, A

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Experimental investigation of the flow behind a circular cylinder controlled by combination of a rotary oscillation and a radial deformation von Rezaiguia, H., Ghoualli, M. A., Oualli, H.

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Wake structure and aerodynamic characteristics of an auto-propelled pitching airfoil von Hanchi, S., Benkherouf, T., Mekadem, M., Oualli, H., Keirsbulck, L., Labraga, L.

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