Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition von Bosi, M, Attolini, G, Negri, M, Ferrari, C, Buffagni, E, Frigeri, C, Calicchio, M, Pcz, B, Riesz, F, Cora, I, Osvth, Z, Jiang, L, Borionetti, G

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