Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition von Milanov, Andrian P, Xu, Ke, Laha, Apurba, Bugiel, Eberhard, Ranjith, Ramadurai, Schwendt, Dominik, Osten, H. Jörg, Parala, Harish, Fischer, Roland A, Devi, Anjana

Volltext

Grazing‐incidence X‐ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system von Barnscheidt, Yvo, Schmidt, Jan, Osten, H. Jörg

Volltext

Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy von Genath, Hannah, Schmidt, Jan, Osten, H. Jörg

Volltext

Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si von Chaudhuri, Ayan Roy, Fissel, A., Osten, H. Jörg

Volltext

Corrigendum to “Influence of (7 × 7)–“1 × 1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(1 1 1)”. [J. Cryst. Growth 425 (2015) 154–1... von Fissel, Andreas, Chaudhuri, Ayan Roy, Krügener, Jan, Jörg Osten, H.

Volltext

Carbon-mediated epitaxy of SiGe virtual substrates on Si(001) von Schmidt, Jan, Tetzlaff, Dominic, Wietler, Tobias F, Osten, H Jörg

Volltext

Simulation of solar cell performance based on in the field measured ambience parameters von Wetzel, Gustav, Krügener, Jan, Peibst, Robby, Dietrich, André, Nacke, Bernhard, Osten, H. Jörg

Volltext

Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices von Ghosh, Kankat, Das, Sudipta, Fissel, Andreas, Osten, H. Jorg, Laha, Apurba

Volltext

Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells von Kiefer, Fabian, Peibst, Robby, Ohrdes, Tobias, Dullweber, Thorsten, Krügener, Jan, Osten, H. Jörg, Schöllhorn, Claus, Grohe, Andreas, Brendel, Rolf

Volltext

Structural analysis of textured silicon surfaces after ion implantation under tilted angle von Krügener, Jan, Bugiel, Eberhard, Peibst, Robby, Kiefer, Fabian, Ohrdes, Tobias, Brendel, Rolf, Jörg Osten, H

Volltext

(Invited) Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon von Osten, H. Jörg, Schwendt, Dominik

Volltext

Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells von Krügener, Jan, Haase, Felix, Rienäcker, Michael, Brendel, Rolf, Osten, H.Jörg, Peibst, Robby

Volltext

Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates von Genath, Hannah, Norberg, Jenny, Wolpensinger, Bettina, Osten, H. Jörg

Volltext

Role of boron and (√3 × √3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study von Fissel, Andreas, Krügener, Jan, Schwendt, Dominik, Osten, H. Jörg

Volltext

Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters von Krügener, Jan, Peibst, Robby, Wolf, F. Alexander, Bugiel, Eberhard, Ohrdes, Tobias, Kiefer, Fabian, Schollhorn, Claus, Grohe, Andreas, Brendel, Rolf, Osten, H. Jorg

Volltext

Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001) von Osten, H. Jörg

Volltext

Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy von Singh, Dushyant, V V, Tharundev, Maity, Subha, Gayakwad, Dhammapriy, Jörg Osten, H., Lodha, Saurabh, Khiangte, Krista R

Volltext

Paving the way to dislocation reduction in Ge/Si(001) heteroepitaxy using C-based strained layer superlattices von Barnscheidt, Y., Franck, M., Jörg Osten, H.

Volltext

Structural Investigation of Printed Ag/Al Contacts on Silicon and Numerical Modeling of Their Contact Recombination von Kiefer, Fabian, Krugener, Jan, Heinemeyer, Frank, Osten, H. Jorg, Brendel, Rolf, Peibst, Robby

Volltext

Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors von Montañez, Liz M., Strauß, Ina, Caro, Jürgen, Osten, H.Jörg

Volltext