Controlling the intermediate conductance states in RRAM devices for synaptic applications von García, H., Ossorio, O.G., Dueñas, S., Castán, H.

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Dynamics of set and reset processes on resistive switching memories von Dueñas, S., Castán, H., Ossorio, O.G., García, H.

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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices von Vinuesa, G., Ossorio, O.G., García, H., Sahelices, B., Castán, H., Dueñas, S., Kull, M., Tarre, A., Jogiaas, T., Tamm, A., Kasikov, A., Kukli, K.

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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications von Ossorio, Ó.G., Vinuesa, G., García, H., Sahelices, B., Dueñas, S., Castán, H., Ritala, M., Leskelaˇ, M., Kemell, M., Kukli, K.

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