Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1− x )0.5In0.5P/GaP light-emitting diodes von Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., Robbins, V. M.

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High performance AlGaInP visible light-emitting diodes von KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, LARDIZABAL, M. C, CRAFORD, M. G, ROBBINS, V. M

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Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer von HUANG, K. H, YU, J. G, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, STINSON, L. J, CRAFORD, M. G, LIAO, A. S. H

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Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium von STOCKMAN, S. A, HUANG, J.-W, LIANG, B. W, OSENTOWSKI, T. D, CHUI, H. C, PEANASKY, M. J, MARANOWSKI, S. A, GRILLOT, P. N, MOLL, A. J, CHEN, C. H, KUO, C. P

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The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer von Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Huang, K. H., Craford, M. G., Robbins, V. M.

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Short-wavelength (≤6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers von DALLESASSE, J. M, NAM, D. W, DEPPE, D. G, HOLONYAK, N. JR, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Impurity-induced layer disordering of high gap Iny(AlxGa1-x)1-yP heterostructures von DEPPE, D. G, NAM, D. W, HOLONYAK, N, HSIEH, K. C, BAKER, J. E, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, CRAFORD, M. G

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Impurity-induced layer disordering in In0.5(AlxGa1-x)0.5P-InGaP quantum-well heterostructures: visible-spectrum-buried heterostructure lasers von DALLESASSE, J. M, PLANO, W. E, NAM, D. W, HSIEH, K. C, BAKER, J. E, HOLONYAK, N. JR, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, CRAFORD, M. G

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Native-oxide stripe-geometry In0.5(AlxsGa1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes von KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, SUGG, A. R, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Hydrogenation-defined stripe-geometry In0.5(AlxGa1-x)0.5P quantum-well lasers von DALLESASSE, J. M, EL-ZEIN, N, HOLONYAK, N. JR, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Photopumped phonon-assisted laser operation (77 K) of In0.5(AlxGa1-x)0.5P quantum well heterostructures von NAM, D. W, HOLONYAK, N. JR, HSIEH, K. C, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, CRAFORD, M. G

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Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers von Kish, F. A., Caracci, . J., Holonyak, N., Hsieh, K. C., Baker, J. E., Maranowski, S. A., Sugg, A. R., Dallesasse, J. M., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G.

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Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium von Stockman, S. A., Huang, J. -W., Osentowski, T. D., Chui, H. C., Peanasky, M. J., Maranowski, S. A., Grillot, P. N., Moll, A. J., Chen, C. H., Kuo, C. P., Liang, B. W.

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Properties and use of In0.5(AlxGa1-x)0.5P and AlxGa1-xAs native oxides in heterostructure lasers von KISH, F. A, CARACCI, S. J, OSENTOWSKI, T. D, CRAFORD, M. G, HOLONYAK, N. JR, HSIEH, K. C, BAKER, J. E, MARANOWSKI, S. A, SUGG, A. R, DALLESASSE, J. M, FLETCHER, R. M, KUO, C. P

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Short-wavelength (∼625 nm) room-temperature continuous laser operation of In0.5(AlxGa1-x)0.5P quantum well heterostructures von NAM, D. W, DEPPE, D. G, HOLONYAK, N. JR, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Planar native-oxide buried-mesa AlxGa1-xAs-In0.5(AlGa1-y)0.5P-In0.5(AlZGa1-z)0.5P visible-spectrum laser diodes von KISH, F. A, CARACCI, S. J, MARANOWSKI, S. A, HOLONYAK, N. JR, HSIEH, K. C, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, CRAFORD, M. G

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Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures von Kuo, C.P., Fletcher, R.M., Osentowski, T.D., Craford, M.G., Nam, D.W., Holonyak, N., Hsieh, K.C., Fouquet, J.E.

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Comparison of SiIII-SiV and SiIII-VIII diffusion models in III-V heterostructures lattice matched to GaAs von Deppe, D. G., Plano, W. E., Baker, J. E., Holonyak, N., Ludowise, M. J., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G.

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Planar native-oxide buried-mesa Al(x)Ga(1-x)As-In(0.5)(Al(y)Ga(1-y))(0.5) P-In(0.5)(Al(z)Ga(1-z)(0.5)P visible-spectrum laser diodes von Kish, F A, Caracci, S J, MARANOWSKI, S A, HOLONYAK, N, J R, Hsieh, K C, Kuo, C P, Fletcher, R M, OSENTOWSKI, T D, CRAFORD, M G

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Planar native-oxide buried-mesa Al x Ga1− x As-In0.5(Al y Ga1− y )0.5P- In0.5(Al z Ga1− z )0.5P visible-spectrum laser diodes von Kish, F. A., Caracci, S. J., Maranowski, S. A., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G.

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