Silicon clustering in Si–GaAs δ-doped layers and superlattices von Boscherini, F., Ferretti, N., Bonanni, B., Orani, D., Rubini, S., Piccin, M., Franciosi, A.

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Metal/III–V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles von Bonanni, B., Orani, D., Lazzarino, M., Rubini, S., Franciosi, A.

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Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures von Bonanni, B., Pelucchi, E., Rubini, S., Orani, D., Franciosi, A., Garulli, A., Parisini, A.

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Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy von Barbo, F., Bertolo, M., Bianco, A., Cautero, G., Fontana, S., Johal, T. K., La Rosa, S., Purandare, R. C., Svetchnikov, N., Franciosi, A., Orani, D., Piccin, M., Rubini, S., Cimino, R.

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Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1−xAs von Marinelli, C., Sorba, L., Müller, B.H., Kumar, D., Orani, D., Rubini, S., Franciosi, A., De Franceschi, S., Lazzarino, M., Beltram, F.

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Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures von Quagliano, L.G, Sobiesierski, Z, Orani, D, Ricci, A

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Arsenic incorporation in InP epitaxial layers: a Raman scattering study von Quagliano, L.G., Jusserand, B., Mollot, F., Orani, D.

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Resonant transport in Nb /GaAs /AlGaAs heterostructures: realization of the de Gennes-Saint-James model von Giazotto, F, Pingue, P, Beltram, F, Lazzarino, M, Orani, D, Rubini, S, Franciosi, A

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Phonons in single thin epitaxial layers of InAs on InP von Quagliano, L.G, Jusserand, B, Orani, D

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Binding Energy and Lifetime of Excitons in InxGa1-xAs/GaAs Quantum Wells von Orani, D., Polimeni, A., Patanè, A., Capizzi, M., Martelli, F., D'Andrea, A., Tomassini, N., Borri, P., Gurioli, M., Colocci, M.

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Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces von Orani, D., Piccin, M., Rubini, S., Pelucchi, E., Bonanni, B., Franciosi, A., Passaseo, A., Cingolani, R., Khan, A.

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Reflectionless tunneling in planar Nb/GaAs hybrid junctions von Giazotto, Francesco, Cecchini, Marco, Pingue, Pasqualantonio, Beltram, Fabio, Lazzarino, Marco, Orani, Daniela, Rubini, Silvia, Franciosi, Alfonso

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SERS spectroscopy to study adsorbates on semiconductor surfaces von Quagliano, Lucia G., Jusserand, Bernard, Orani, Daniela

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Surface-enhanced raman scattering from molecules adsorbed on GaAs surfaces von Quagliano, Lucia G., Orani, Daniela

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Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 x 1 surfaces von ORANI, D, PICCIN, M, RUBINI, S, PELUCCHI, E, BONANNI, B, FRANCIOSI, A, PASSASEO, A, CINGOLANI, R, KHAN, A

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Tunable Schottky barrier contacts to InxGa1−xAs von Marinelli, C., Sorba, L., Lazzarino, M., Kumar, D., Pelucchi, E., Müller, B. H., Orani, D., Rubini, S., Franciosi, A., De Franceschi, S., Beltram, F.

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Ohmic versus rectifying contacts through interfacial dipoles: Al/In xGa 1− xAs von Marinelli, C., Sorba, L., Müller, B.H., Kumar, D., Orani, D., Rubini, S., Franciosi, A., De Franceschi, S., Lazzarino, M., Beltram, F.

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InAs on InP: Intermediate alloy formation and interface vibrations von Quagliano, Lucia G., Jusserand, Bernard, Orani, Daniela

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Ohmic versus rectifying contacts through interfacial dipoles : Al/InxGa1-xAs von MARINELLI, C, SORBA, L, MÜLLER, B. H, KUMAR, D, ORANI, D, RUBINI, S, FRANCIOSI, A, DE FRANCESCHI, S, LAZZARINO, M, BELTRAM, F

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Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures von Giazotto, F, Pingue, P, Beltram, F, Lazzarino, M, Orani, D, Rubini, S, Franciosi, A

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