Te-based chalcogenide materials for selector applications von Velea, A., Opsomer, K., Devulder, W., Dumortier, J., Fan, J., Detavernier, C., Jurczak, M., Govoreanu, B.

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Material relaxation in chalcogenide OTS SELECTOR materials von Clima, S., Garbin, D., Devulder, W., Keukelier, J., Opsomer, K., Goux, L., Kar, G.S., Pourtois, G.

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A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash von Ramesh, S., Banerjee, K., Opsomer, K., Rachita, I., Bastos, J. P., Soulie, J-Ph, Sebaai, F., Favia, P., Korytov, M., Richard, O., Breuil, L., Arreghini, A., Van Den Bosch, G., Rosmeulen, M.

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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells von Goux, L., Opsomer, K., Degraeve, R., Müller, R., Detavernier, C., Wouters, D. J., Jurczak, M., Altimime, L., Kittl, J. A.

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance von Brunco, D. P., De Jaeger, B., Eneman, G., Mitard, J., Hellings, G., Satta, A., Terzieva, V., Souriau, L., Leys, F. E., Pourtois, G., Houssa, M., Winderickx, G., Vrancken, E., Sioncke, S., Opsomer, K., Nicholas, G., Caymax, M., Stesmans, A., Van Steenbergen, J., Mertens, P. W., Meuris, M., Heyns, M. M.

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High- k dielectrics for future generation memory devices (Invited Paper) von Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.

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Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems von Goux, L., Opsomer, K., Franquet, A., Kar, G., Jossart, N., Richard, O., Wouters, D.J., Müller, R., Detavernier, C., Jurczak, M., Kittl, J.A.

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Electronic properties of manganese impurities in germanium von Lauwaert, J, Segers, S H, Moens, F, Opsomer, K, Clauws, P, Callens, F, Simoen, E, Vrielinck, H

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Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes... von Menou, N., Popovici, M., Clima, S., Opsomer, K., Polspoel, W., Kaczer, B., Rampelberg, G., Tomida, K., Pawlak, M. A., Detavernier, C., Pierreux, D., Swerts, J., Maes, J. W., Manger, D., Badylevich, M., Afanasiev, V., Conard, T., Favia, P., Bender, H., Brijs, B., Vandervorst, W., Van Elshocht, S., Pourtois, G., Wouters, D. J., Biesemans, S., Kittl, J. A.

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Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements von Geenen, F.A., Knaepen, W., De Keyser, K., Opsomer, K., Vanmeirhaeghe, R.L., Jordan-Sweet, J., Lavoie, C., Detavernier, C.

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Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions von Opsomer, K., Deduytsche, D., Detavernier, C., Van Meirhaeghe, R. L., Lauwers, A., Maex, K., Lavoie, C.

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Silicides and germanides for nano-CMOS applications von Kittl, J.A., Opsomer, K., Torregiani, C., Demeurisse, C., Mertens, S., Brunco, D.P., Van Dal, M.J.H., Lauwers, A.

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Control of metal/oxide electron barriers in CBRAM cells by low work-function liners von De Stefano, F., Afanas’ev, V.V., Houssa, M., Stesmans, A., Opsomer, K., Jurczak, M., Goux, L.

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Electron barrier height at CuxTe1−x/Al2O3 interfaces of conducting bridge memory stacks von Afanas'ev, V.V., De Stefano, F., Houssa, M., Stesmans, A., Goux, L., Opsomer, K., Detavernier, C., Kittl, J.A., Jurczak, M.

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Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications von Antony Premkumar, P., Carbonell, L., Schaekers, M., Opsomer, K., Adelmann, C., Richard, O., Bender, H., Franquet, A., Meersschaut, J., Wen, L., Zsolt, T., Van Elshocht, S.

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Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium von Simoen, E., Opsomer, K., Claeys, C., Maex, K., Detavernier, C., Van Meirhaeghe, R. L., Clauws, P.

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Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates von KITTL, J. A, PAWLAK, M. A, ABSIL, P, MAEX, K, BIESEMANS, S, LAUWERS, A, DEMEURISSE, C, OPSOMER, K, ANIL, K. G, VRANCKEN, C, VAN DAL, M. J. H, VELOSO, A, KUBICEK, S

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The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes von Leroy, W.P., Opsomer, K., Forment, S., Van Meirhaeghe, R.L.

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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n -type germanium von Simoen, E., Opsomer, K., Claeys, C., Maex, K., Detavernier, C., Van Meirhaeghe, R. L., Forment, S., Clauws, P.

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Defect engineering aspects of advanced Ge process modules von Claeys, C., Simoen, E., Opsomer, K., Brunco, D.P., Meuris, M.

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