Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model von Oproglidis, T.A., Tassis, D.H., Tsormpatzoglou, A., Ghibaudo, G., Dimitriadis, C.A.

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Threshold voltage of p-type triple-gate junctionless transistors von Oproglidis, T.A., Tassis, D.H., Tsormpatzoglou, A., Karatsori, T.A., Theodorou, C.G., Barraud, S., Ghibaudo, G., Dimitriadis, C.A.

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Corrigendum to “Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model” [Solid-State Electron. 170 (2020) 107835] von Oproglidis, T.A., Tassis, D.H., Tsormpatzoglou, A., Ghibaudo, G., Dimitriadis, C.A.

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Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs von Oproglidis, T.A., Tsormpatzoglou, A., Tassis, D.H., Theodorou, C.G., Ghibaudo, G., Dimitriadis, C.A.

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Leakage current conduction in metal gate junctionless nanowire transistors von Oproglidis, T.A., Karatsori, T.A., Barraud, S., Ghibaudo, G., Dimitriadis, C.A.

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Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport von Oproglidis, T.A., Karatsori, T.A., Barraud, S., Ghibaudo, G., Dimitriadis, C.A.

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