Growth and characterization of a delta-function doping layer in Si von ZEINDL, H. P, WEGEHAUPT, T, EISELE, I, OPPOLZER, H, REISINGER, H, TEMPEL, G, KOCH, F

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Novel relaxation process in strained Si/Ge superlattices grown on Ge (001) von WEGSCHEIDER, W, EBERL, K, ABSTREITER, G, CERVA, H, OPPOLZER, H

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Transmission electron microscopy of layered structures and interfaces von OPPOLZER, H

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High-resolution electron microscopy of heterostructures and interfaces von Cerva, H., Oppolzer, H.

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Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates von WEGSCHEIDER, W, EBERL, K, CERVA, H, OPPOLZER, H

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Investigation of Twin Lamellae in BaTiO3 Ceramics von OPPOLZER, H., SCHMELZ, H.

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Thickness determination of thin SiO2 on silicon von Reisinger, H., Oppolzer, H., Hönlein, W.

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Determination of composition profile and atomic-scale roughness of GaAs/AlGaAs interfaces by high-resolution transmission electron microscopy von Thoma, S., Riechert, H., Mitwalsky, A., Oppolzer, H.

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TEM characterization of defects in LEC-grown GaAs substrates von Wurzinger, P., Oppolzer, H., Pongratz, P., Skalicky, P.

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Analysis of polysilicon diffusion sources von PROBST, V, BÖHM, H. J, SCHABER, H, OPPOLZER, H, WEITZEL, I

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Cross-sectional transmission electron microscopy of electroluminescent thin films fabricated by various deposition methods von Theis, D., Oppolzer, H., Ebbinghaus, G., Schild, S.

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Characterization of alloyed Au/Cr/Au/Ge ohmic contacts on GaAs using electrical measurements, transmission electron microscopy and Auger electron spectroscopy von Willer, J., Oppolzer, H.

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Very stable Ge/Au/Cr/Au ohmic contacts to GaAs von WILLER, J, RISTOW, D, KELLNER, W, OPPOLZER, H

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Microstructure and light emission of ac thin-film electroluminescent devices von Venghaus, H., Theis, D., Oppolzer, H., Schild, S.

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Diffusion of B and As from polycrystalline silicon during rapid optical annealing von BÖHM, H. J, WENDT, H, OPPOLZER, H, MASSELI, K, KASSING, R

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Influence of substrate misorientation and temperature on MBE-grown Si von Zeindl, H.P., Fuenzalida, V., Messarosch, J., Eisele, I., Oppolzer, H., Huber, V.

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The interfaces a-Si:H/Pd and a-Si:H/ITO: Structure and electronic properties von Hoheisel, M., Brutscher, N., Oppolzer, H., Schild, S.

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Reflection X-ray topography of oxidation-induced stacking faults in silicon von Oppolzer, H.

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Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films von BECKER, F. S, OPPOLZER, H, WEITZEL, I, EICHERMÜLLER, H, SCHABER, H

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Influence of concentration gradients and surface roughness on measured reduced thicknesses of overlayers von Ebel, M.F., Moser, G., Ebel, H., Jablonski, A., Oppolzer, H.

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