Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs von Gila, B.P., Johnson, J.W., Mehandru, R., Luo, B., Onstine, A.H., Krishnamoorthy, V., Bates, S., Abernathy, C.R., Ren, F., Pearton, S.J.

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Novel dielectrics for gate oxides and surface passivation on GaN von Gila, B.P., Thaler, G.T., Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, B., Anderson, T., Abernathy, C.R., Ren, F., Pearton, S.J.

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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors von Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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Small signal measurement of Sc2O3 AlGaN/GaN moshemts von Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.

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High three-terminal breakdown voltage and output power of Sc 2 O 3 passivated AlGaN/GaN high electron mobility transistors von Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.

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Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts von Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.

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Effects of Sc 2 O 3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs von Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

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Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors von Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS von Luo, B, Mehandru, R.M, Kim, Jihyun, Ren, F, Gila, B.P, Onstine, A.H, Abernathy, C.R, Pearton, S.J, Fitch, R.C, Gillespie, J, Dellmer, R, Jenkins, T, Sewell, J, Via, D, Crespo, A

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Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors von Abernathy, C.R, Gila, B.P, Onstine, A.H, Pearton, S.J, Kim, Ji-Hyun, Luo, B, Mehandru, R, Ren, F, Gillespie, J.K, Fitch, R.C, Seweel, J, Dettmer, R, Via, G.D, Crespo, A, Jenkins, T.J, Irokawa, Y

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Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor von Gila, Brent, Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, Sam, Abernathy, C.R., Ren, Fan, Pearton, Stephen

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Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors von Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., Irokawa, Y.

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