Treffer 1 - 6 von 6 für Suche 'Onsee, Peeradon', Suchdauer: 0,48s Treffer weiter einschränken
  1. 1
    Developing Critical Thinking of Grade 10 Students through Inquiry-Based STEM Learning

    Developing Critical Thinking of Grade 10 Students through Inquiry-Based STEM Learning von Onsee, Peeradon, Nuangchalerm, Prasart


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  2. 2
    Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering

    Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering von Nopparuchikun, Adison, Promros, Nathaporn, Teakchaicum, Sakmongkon, Onsee, Peeradon, Duangrawa, Asanlaya, Sittimart, Phongsaphak


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  3. 3
    Carrier transportation properties and series resistance of n-type β-FeSi 2 /p-type Si heterojunctions fabricated by RF magnetron sputtering

    Carrier transportation properties and series resistance of n-type β-FeSi 2 /p-type Si heterojunctions fabricated by RF magnetron sputtering von Nopparuchikun, Adison, Promros, Nathaporn, Teakchaicum, Sakmongkon, Onsee, Peeradon, Duangrawa, Asanlaya, Sittimart, Phongsaphak


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  4. 4
    Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser depositionInvited talk at 5th Thailand International Nanotechnology Conference (Nano Thailand-2016), 27-29 November 2016, Nakhon Ratchasima, Thailand

    Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser depositionInvited talk at 5th Thailand International Nanotec... von Nopparuchikun, Adison, Promros, Nathaporn, Sittimart, Phongsaphak, Onsee, Peeradon, Duangrawa, Asanlaya, Teakchaicum, Sakmongkon, Nogami, Tomohiro, Yoshitake, Tsuyoshi


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  5. 5
    Interface-state density estimation of n-type nanocrystalline FeSi 2 /p-type Si heterojunctions fabricated by pulsed laser deposition

    Interface-state density estimation of n-type nanocrystalline FeSi 2 /p-type Si heterojunctions fabricated by pulsed laser deposition von Nopparuchikun, Adison, Promros, Nathaporn, Sittimart, Phongsaphak, Onsee, Peeradon, Duangrawa, Asanlaya, Teakchaicum, Sakmongkon, Nogami, Tomohiro, Yoshitake, Tsuyoshi


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  6. 6
    Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions

    Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions von Sittimart, Phongsaphak, Nopparuchikun, Adison, Onsee, Peeradon, Duangrawa, Asanlaya, Teakchaicum, Sakmongkon, Promros, Nathaporn


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