Choice of Generation Volume Models for Electron Beam Induced Current Computation von Kurniawan, O., Ong, V.K.S.

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Charge Collection From Within a Collecting Junction Well von Kurniawan, O., Ong, V.K.S.

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Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths von Kurniawan, O., Ong, V.K.S.

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Determination of diffusion length from within a confined region with the use of EBIC von Ong, V.K.S., Wu, D.

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Determination of material parameters from regions close to the collector using electron beam-induced current von Wu, D., Ong, V.K.S.

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A direct method of extracting surface recombination velocity from an electron beam induced current line scan von Ong, Vincent K. S.

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Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current von Poh Chin Phua, Ong, V.K.S.

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Potential sources of error in electron beam induced current simulation von Ong, Vincent K. S., Phua, Poh Chin

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A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration von Chan, D.S.H., Ong, V.K.S., Phang, J.C.H.

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Junction depth determination by reconstruction of the charge collection probability in a semiconductor device von Ong, Vincent K S, Phua, Poh Chin

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Enhancing electron beam induced current images von Ong, Vincent K. S., Wu, Dethau

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Single contact beam induced current phenomenon for microelectronic failure analysis von Phang, JCH, Chan, DSH, Ong, VKS, Kolachina, S, Chin, JM, Palaniappan, M, Gilfeather, G, Seah, YX

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Theory of the single contact electron beam induced current effect von Ong, V.K.S., Lau, K.T., Ma, J.G.

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Extracting diffusion length using the single contact electron beam induced current technique von Ong, Vincent K.S, Wu, Dethau

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A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan von Ong, V.K.S., Phang, J.C.H., Chan, D.S.H.

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Large area electron beam induced current imaging with a single contact von Ong, V.K.S, Liu, P.C, Lau, K.T

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Unconnected junction contrast in ion beam induced charge microscopy von Kolachina, S., Ong, V. K. S., Chan, D. S. H., Phang, J. C. H., Osipowicz, T., Watt, F.

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Recent results in ion beam induced charge microscopy: Unconnected junction contrast and an assessment of single contact IBIC von Osipowicz, T., Sanchez, J.L., Orlić, I., Watt, F., Kolachina, S., Ong, V.K.S., Chan, D.S.H., Phang, J.C.H.

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New developments in beam induced current methods for the failure analysis of VLSI circuits von Chan, D.S.H., Phang, J.C.H., Lau, W.S., Ong, V.K.S., Sane, V, Kolachina, S, Osipowicz, T., Watt, F.

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Determination of the junction depth of a semiconductor device by the reconstruction of the charge collection probability von Poh Chin Phua, Ong, V.K.S.

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