Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire von Sato, Kosuke, Yasue, Shinji, Yamada, Kazuki, Tanaka, Shunya, Omori, Tomoya, Ishizuka, Sayaka, Teramura, Shohei, Ogino, Yuya, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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AlGaN-based UV-B laser diode with a high optical confinement factor von Tanaka, Shunya, Ogino, Yuya, Yamada, Kazuki, Omori, Tomoya, Ogura, Reo, Teramura, Shohei, Shimokawa, Moe, Ishizuka, Sayaka, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation von Kondo, Ryosuke, Yabutani, Ayumu, Omori, Tomoya, Yamada, Kazuki, Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki

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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes von Shimokawa, Moe, Teramura, Shohei, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Ogino, Yuya, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN von Shojiki, Kanako, Shimokawa, Moe, Iwayama, Sho, Omori, Tomoya, Teramura, Shohei, Yamaguchi, Akihiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto

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Recent development of UV-B laser diodes von Iwaya, Motoaki, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Hasegawa, Ryota, Shimokawa, Moe, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto

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Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods von Matsubara, Eri, Omori, Tomoya, Hasegawa, Ryota, Yamada, Kazuki, Yabutani, Ayumu, Kondo, Ryosuke, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki

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Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method von Shimokawa, Moe, Yamada, Yuya, Omori, Tomoya, Yamada, Kazuki, Hasegawa, Ryota, Nishibayashi, Toma, Yabutani, Ayumu, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Miyake, Hideto, Miyoshi, Kohei, Naniwae, Koichi, Yamaguchi, Akihiro

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Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers von Tanaka, Shunya, Kawase, Yuta, Teramura, Shohei, Iwayama, Sho, Sato, Kosuke, Yasue, Shinji, Omori, Tomoya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length von Sato, Kosuke, Omori, Tomoya, Yamada, Kazuki, Tanaka, Shunya, Ishizuka, Sayaka, Teramura, Shohei, Iwayama, Sho, Iwaya, Motoaki, Miyake, Hideto, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping von Omori, Tomoya, Ishizuka, Sayaka, Tanaka, Shunya, Yasue, Shinji, Sato, Kosuke, Ogino, Yuya, Teramura, Shohei, Yamada, Kazuki, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B... von Omori, Tomoya, Yabutani, Ayumu, Tanaka, Shunya, Yamada, Kazuki, Shimokawa, Moe, Hasegawa, Ryota, Iwayama, Sho, Miyake, Hideto, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki

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AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate von Tanaka, Shunya, Teramura, Shohei, Shimokawa, Moe, Yamada, Kazuki, Omori, Tomoya, Iwayama, Sho, Sato, Kosuke, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Fabrication of High Quality AlGaN Films and UV-B Semiconductor Lasers von Iwaya, Motoaki, Omori, Tomoya, Tanaka, Shunya, Yamada, Kazuki, Teramura, Shohei, Ogino, Yuya, Ishizuka, Sayaka, Sato, Kosuke, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Reduction of dislocation density in lattice-relaxed Al 0.68 Ga 0.32 N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of... von Omori, Tomoya, Yabutani, Ayumu, Tanaka, Shunya, Yamada, Kazuki, Shimokawa, Moe, Hasegawa, Ryota, Iwayama, Sho, Miyake, Hideto, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki

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Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al 0.6 Ga 0.4 N/AlN/sapphire von Sato, Kosuke, Yasue, Shinji, Yamada, Kazuki, Tanaka, Shunya, Omori, Tomoya, Ishizuka, Sayaka, Teramura, Shohei, Ogino, Yuya, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Study on improvement of injection efficiency in AlGaN-based UV-B LD structures von Yabutani, Ayumu, Omori, Tomoya, Tanaka, Shunya, Yamada, Kazuki, Sato, Kosuke, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Analysis of AlGaN UVB LD to reduce threshold current density von Sato, Kosuke, Omori, Tomoya, Yamada, Kazuki, Tanaka, Shunya, Ishizuka, Sayaka, Teramura, Shohei, Iwayama, Sho, Iwaya, Motoaki, Miyake, Hideto, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Mg concentration dependence of low Al composition polarized doped p-type AlGaN cladding layers on UV-B LD von Yamada, Kazuki, Omori, Tomoya, Tanaka, Shunya, Ogino, Yuya, Sato, Kosuke, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Reduction of Jth in AlGaN-based UV-B LDs with high light confinement structure von Omori, Tomoya, Tanaka, Syunya, Ogino, Yuya, Yamada, Kazuki, Teramura, Shohei, Sato, Kosuke, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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