Formation of oriented nanostructures in diamond using metallic nanoparticles von Mehedi, H-A, Hebert, C, Ruffinatto, S, Eon, D, Omnes, F, Gheeraert, E

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Metal-insulator transition and superconductivity in boron-doped diamond von Klein, T., Achatz, P., Kacmarcik, J., Marcenat, C., Gustafsson, F., Marcus, J., Bustarret, E., Pernot, J., Omnes, F., Sernelius, Bo E., Persson, C., Ferreira da Silva, A., Cytermann, C.

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Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures von Chicot, G., Fiori, A., Volpe, P. N., Tran Thi, T. N., Gerbedoen, J. C., Bousquet, J., Alegre, M. P., Piñero, J. C., Araújo, D., Jomard, F., Soltani, A., De Jaeger, J. C., Morse, J., Härtwig, J., Tranchant, N., Mer-Calfati, C., Arnault, J. C., Delahaye, J., Grenet, T., Eon, D., Omnès, F., Pernot, J., Bustarret, E.

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Wide-bandgap semiconductor ultraviolet photodetectors von Monroy, E, Omnès, F, Calle, F

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Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers von Muret, P., Volpe, P.-N., Tran-Thi, T.-N., Pernot, J., Hoarau, C., Omnès, F., Teraji, T.

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Doping-induced anisotropic lattice strain in homoepitaxial heavily boron-doped diamond von Wojewoda, T., Achatz, P., Ortéga, L., Omnès, F., Marcenat, C., Bourgeois, E., Blase, X., Jomard, F., Bustarret, E.

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Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films von Ghodbane, S., Ballutaud, D., Omnès, F., Agnès, C.

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Direct observation of the core structures of threading dislocations in GaN von Xin, Y., Pennycook, S. J., Browning, N. D., Nellist, P. D., Sivananthan, S., Omnès, F., Beaumont, B., Faurie, J. P., Gibart, P.

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Isotopic substitution of boron and carbon in superconducting diamond epilayers grown by MPCVD von Achatz, P., Omnès, F., Ortéga, L., Marcenat, C., Vacík, J., Hnatowicz, V., Köster, U., Jomard, F., Bustarret, E.

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Hole traps profile and physical properties of deep levels in various homoepitaxial diamond films studied by isothermal and deep level transient spectroscopies von Muret, P., Volpe, P.-N., Pernot, J., Omnès, F.

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AlGaN metal–semiconductor–metal photodiodes von Monroy, E., Calle, F., Muñoz, E., Omnès, F.

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Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers von Fernández-Lorenzo, C., Araújo, D., Martín, J., Alcántara, R., Navas, J., Villar, M.P., Alegre, M.P., Volpe, P.N., Omnès, F., Bustarret, E.

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AlGaN-based UV photodetectors von Monroy, E., Calle, F., Pau, J.L., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P.

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Cost-Effectiveness Analysis of Rituximab Combined with CHOP for Treatment of Diffuse Large B-Cell Lymphoma von Best, Jennie H., Hornberger, John, Proctor, Stephen J., Omnes, Louis F., Jost, Fred

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High-responsivity submicron metal-semiconductor-metal ultraviolet detectors von Palacios, T., Monroy, E., Calle, F., Omnès, F.

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Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection von Monroy, E., Palacios, T., Hainaut, O., Omnès, F., Calle, F., Hochedez, J.-F.

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Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3ω-Völklein method von Sikora, A., Ftouni, H., Richard, J., Hébert, C., Eon, D., Omnès, F., Bourgeois, O.

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Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes von Monroy, E., Calle, F., Pau, J. L., Sánchez, F. J., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P.

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Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis von Araújo, D., Alegre, M.P., García, A.J., Navas, J., Villar, M.P., Bustarret, E., Volpe, P.N., Omnès, F.

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Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition von Ruterana, P., De Saint Jores, G., Laügt, M., Omnes, F., Bellet-Amalric, E.

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