Passivation of GaAs by atomic hydrogen flow produced by the crossed beams method von Balmashnov, A A, Golovanivsky, K S, Omeljanovsky, E M, Pakhomov, A V, Polyakov, A Y

Volltext

Hydrogen passivation of donors and acceptors in InP von Omeljanovsky, E M, Pakhomov, A V, Polyakov, A Y

Volltext

Charge state and hydrogen levels position in different III–V materials von Omeljanovsky, E.M., Pakhomov, A.V., Polyakov, A.Y.

Volltext

Oxygen-related deep centres in LEC grown GaAs crystals von Markov, A.V., Osvensky, V.B., Polyakov, A.Y., Tishkin, M.V., Omeljanovsky, E.M.

Volltext

Hydrogen passivation of defects and impurities in GaAs and InP von OMELJANOVSKY, E. M, PAKHOMOV, A. V, POLYAKOV, A. Y

Volltext

The charge state of hydrogen and hydrogen diffusion in InP and InGaAs von Omeljanovsky, E.M., Pakhomov, A.V., Polyakov, A.Y., Borodina, O.M., Kozhukhova, E.A., Nashelskii, A.Y., Yakobson, S.Y., Novikova, V.V.

Volltext

Atomic hydrogen modification of polycrystalline silicon solar cells characteristics von Pakhomov, A.V., Polyakov, A.Y., Popova, E.V., Borodina, O.M., Bruk, A.S., Govorkov, A.V., Omeljanovsky, E.M., Topel, B., Mirica, V.

Volltext

Raman study of hydrogen-related complexes in GaAs von Aleshchenko, Yu.A., Vodopyanov, L.K., Omeljanovsky, E.M., Pakhomov, A.V., Polyakov, A.Y.

Volltext

Defects in semi-insulating GaAs as indicated by small-angle laser beam scattering von Kalinushkin, V P, Murin, D I, Omeljanovsky, E M, Polyakov, A J, Prohorov, A M, Raihstein, V I

Volltext

Atomic hydrogen passivation of deep levels activity in AlxGa1-xAs multiquantum well structures von POLYAKOV, A. Y, PAKHOMOV, A. V, TISHKIN, M. V, BORODINA, O. M, GOVORKOV, A. V, LEIFEROV, B. M

Volltext

Optical transitions involving deep levels in amorphous semiconductors von Balagurov, L.A., Omeljanovsky, E.M., Petukhov, A.G., Starikov, M.N., Foigel, M.G.

Volltext

Energetic spectrum of deep localized states of D-centers originated from silicon dangling bonus in a-Si:H von Balagurov, L.A., Mackus, P., Omeljanovsky, E.M., Starikov, M.N.

Volltext

The effect of hydrogen on bulk and surface traps in indium antimonide von Polyakov, A.Y., Pakhomov, A.V., Tishkin, M.V., Popkov, A.N., Molodtsova, E.V., Kozhukhova, E.A., Shlensky, A.A., Druzhinina, L.V., Omeljanovsky, E.M.

Volltext