Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection von Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., Chandrashekhar, M. V. S.

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Comparison of Epitaxial Graphene Growth on Polar and Nonpolar 6H-SiC Faces: On the Growth of Multilayer Films von Daas, B. K, Omar, Sabih U, Shetu, S, Daniels, Kevin M, Ma, S, Sudarshan, T. S, Chandrashekhar, M. V. S

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Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model von Omar, Sabih U, Sudarshan, Tangali S, Rana, Tawhid A, Song, Haizheng, Chandrashekhar, M V S

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Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection von Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., Chandrashekhar, M. V. S.

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Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor von Omar, Sabih U., Chandrashekhar, M. V. S., Chowdhury, Iftekhar A., Rana, Tawhid A., Sudarshan, Tangali S.

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Comparison of SiC Epitaxial Growth from Dichlorosilane and Tetrafluorosilane Precursors von Song, Haizheng, Rana, Tawhid, Chandrashekhar, M.V.S., Omar, Sabih U., Sudarshan, Tangali S.

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Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density von Sudarshan, Tangali S., Omar, Sabih U., Chandrashekhar, M.V.S., Song, Hai Zheng

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In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors von Rana, Tawhid, Sudarshan, Tangali S., Omar, Sabih U., Chandrashekhar, M.V.S., Song, Hai Zheng

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WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN von Kolluru, Kalyan C, Joglekar, Sameer Jayanta, Omar, Sabih U, Kar, Ayan, Greene, Brian, Orr, Benjamin, Liang, Chu-Hsin, Guha, Biswajeet, Lin, Chung-Hsun, Thomson, Nicholas A

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Optically switched graphene/4H-SiC junction bipolar transistor von Chandrashekhar, MVS, Omar, Sabih U, Sudarshan, Tangali S, Shetu, Shamaita S, Brown, Gabriel

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Comparison of SiC epitaxial growth from dichlorosilane and tetrafluorosilane precursors von Song, Haizheng, Rana, Tawhid, Chandrashekhar, M.V.S., Omar, Sabih U., Sudarshan, Tangali S.

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OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR von Shetu Shamaita S, Omar Sabih U, Chandrashekhar MVS, Sudarshan Tangali S, Brown Gabriel

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SUBSTRATE-LESS NANOWIRE-BASED LATERAL DIODE INTEGRATED CIRCUIT STRUCTURES von KOLLURU, Kalyan, HU, Lin, LIN, Chung-Hsun, JACK, Nathan, GREENE, Brian, GUHA, Biswajeet, KAR, Ayan, THOMSON, Nicholas, MA, Rui, ORR, Benjamin, OMAR, Sabih

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SUBSTRATE-LESS NANOWIRE-BASED LATERAL DIODE INTEGRATED CIRCUIT STRUCTURES von KOLLURU, Kalyan, HU, Lin, LIN, Chung-Hsun, GREENE, Brian, JACK, Nathan, GUHA, Biswajeet, KAR, Ayan, THOMSON, Nicholas, MA, Rui, ORR, Benjamin, OMAR, Sabih

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SUBSTRATE-FREE INTEGRATED CIRCUIT STRUCTURES von KOLLURU, Kalyan, MEHANDRU, Rishabh, HU, Lin, JACK, Nathan, GUHA, Biswajeet, KAR, Ayan, THOMSON, Nicholas, TSAI, Curtis, JAYANTHINARASIMHAM, Avyaya, MA, Rui, FISCHER, Kevin, LIN, Chung-Hsun, GREENE, Brian, ORR, Benjamin, OMAR, Sabih

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