Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection von Higuchi, Yu, Omae, Kunimichi, Matsumura, Hiroaki, Mukai, Takashi

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Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate von Omae, Kunimichi, Higuchi, Yu, Nakagawa, Kyosuke, Matsumura, Hiroaki, Mukai, Takashi

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Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique von Kawamura, Fumio, Iwahashi, Tomoya, Omae, Kunimichi, Morishita, Masanori, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo

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Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method von Kawamura, Fumio, Morishita, Masanori, Omae, Kunimichi, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo

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Bidirectionally injection-locked coupled microring Ga N lasers von Tohi, Shinji, Harari, Gal, Ito, Takumi, Lumer, Yaakov, Bandres, Miguel A., Omae, Kunimichi, Segev, Mordechai

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Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes von Kawakami, Yoichi, Narukawa, Yukio, Omae, Kunimichi, Fujita, Shigeo, Nakamura, Shuji

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Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System von Kawamura, Fumio, Iwahashi, Tomoya, Morishita, Masanori, Omae, Kunimichi, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo

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Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer von Omae, Kunimichi, Kawakami, Yoichi, Fujita, Shigeo, Yamada, Motokazu, Narukawa, Yukio, Mukai, Takashi

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Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE) von Omae, Kunimichi, Iwahashi, Tomoya, Kawamura, Fumio, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo

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Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge von Omae, Kunimichi, Kawakami, Yoichi, Fujita, Shigeo, Kiyoku, Yukihiro, Mukai, Takashi

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In inhomogeneity and emission characteristics of InGaN von Kawakami, Yoichi, Omae, Kunimichi, Kaneta, Akio, Okamoto, Koichi, Narukawa, Yukio, Mukai, Takashi, Fujita, Shigeo

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Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique von Kawamura, Fumio, Iwahashi, Tomoya, Omae, Kunimichi, Morishita, Masanori, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo

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Emission Mechanism in InGaN-Based Light Emitting Devices von KAWAKAMI, Yoichi, OMAE, Kunimichi, NARUKAWA, Yukio, NAKAMURA, Shuji, FUJITA, Shigeo

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SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING SAME von NODA, Susumu, MICHIUE, Atsuo, MINATO, Shunsuke, OMAE, Kunimichi

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Room-Temperature Continuous-Wave Lasing of A Violet GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection von HIGUCHI, Yu, OMAE, Kunimichi, MATSUMURA, Hiroaki, MUKAI, Takashi

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SEMICONDUCTOR LASER ELEMENT von TOHI, Shinji, ITO, Takumi, SEGEV, Mordechai, OMAE, Kunimichi, HARARI, Gal

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SEMICONDUCTOR DEVICE AND METHOD OF FORMING P-TYPE NITRIDE SEMICONDUCTOR LAYER von KAWAKAMI, Yoichi, FUNATO, Mitsuru, OMAE, Kunimichi, KISHIMOTO, Katsuhiro

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SEMICONDUCTOR DEVICE AND METHOD OF FORMING P-TYPE NITRIDE SEMICONDUCTOR LAYER von KAWAKAMI, Yoichi, FUNATO, Mitsuru, OMAE, Kunimichi, KISHIMOTO, Katsuhiro

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In inhomogeneity and emission characteristics of InGaN: Semiconducting nitrides von KAWAKAMI, Yoichi, OMAE, Kunimichi, KANETA, Akio, OKAMOTO, Koichi, NARUKAWA, Yukio, MUKAI, Takashi, FUJITA, Shigeo

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SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER MANUFACTURING METHOD von NODA SUSUMU, OMAE KUNIMICHI, MICHIGAMI ATSUO, MINATO SHUNSUKE

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