Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As von OLSTHOORN, S. M, DRIESSEN, F. A. J. M, EIJKELENBOOM, A. P. A. M, GILING, L. J

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Influence of Ga precursor choice on ordering degree of MOVPE grown Ga0.5In0.5P von HAGEMAN, P. R, BAUHUIS, G. J, OLSTHOORN, S. M

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Probing the plateau-insulator quantum phase transition in the quantum hall regime von van Schaijk RT, de Visser A, Olsthoorn, SM, Wei, HP, Pruisken, AM

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Photoluminescence properties of a new 1.951-eV transition in III-V semiconductors von OLSTHOORN, S. M, DRIESSEN, F. A. J. M, GILING, L. J

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The influence of impurity concentration on exciton photoluminescence in GaAs and InP von Pen, H F, Dreissen, F A J M, Olsthoorn, S M, Giling, L J

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Photoluminescence properties of AlxGa1-xAs and an investigation of a new 1.951 eV transition von Lochs, H G M, Olsthoorn, S M, Huijgen, T P, Spijkers, F L M, Driessen, F A J M, Giling, L J

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Growth of high-quality AlxGa1-xAs (x = 0.05-0.65) by low-pressure metalorganic vapour phase epitaxy using dimethylethylamine-alane von HAGEMAN, P. R, OLSTHOORN, S. M, GILING, L. J

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Photoluminescence on high-quality AlxGa1-xAs grown by metalorganic vapor-phase epitaxy using alane bis(dimethylethylamine) von OLSTHOORN, S. M, DRIESSEN, F. A. J. M, GILING, L. J, FRIGO, D. M, SMIT, C. J

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Effects of confined donor states on the optical and transport properties of ordered GaInP2 alloys von DRIESSEN, F. A. J. M, BAUHUIS, G. J, OLSTHOORN, S. M, GILING, L. J

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Evidence for a quantum Hall insulator in an InGaAs/InP heterostructure von de Lang, D.T.N, Ponomarenko, L, de Visser, A, Possanzini, C, Olsthoorn, S.M, Pruisken, A.M.M

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Synchrotron calibration and response modelling of back-illuminated XMM-RGS CCDs von Bootsma, T.M.V., van Zwet, E.J., Brinkman, A.C., den Herder, J.W., de Jong, L., de Korte, P., Olsthoorn, S.M.

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Red luminescence in phosphorous-doped chemically vapor deposited diamond von te Nijenhuis, J., Olsthoorn, S. M., van Enckevort, W. J. P., Giling, L. J.

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Scaling behavior of metal–insulator transitions in a Si/SiGe two dimensional hole gas von Possanzini, C., Ponomarenko, L., de Lang, D., de Visser, A., Olsthoorn, S.M., Fletcher, R., Feng, Y., Coleridge, P.T., Williams, R.L., Maan, J.C.

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Photoluminescence properties of the Al0.48In0.52As/InP interface and the diffusion of carriers thereto von OLSTHOORN, S. M, DRIESSEN, F. A. J. M, GILING, L. J

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Detection of two-dimensional electron gases in undoped heterojunctions with magnetophotoluminescence von DRIESSEN, F. A. J. M, OLSTHOORN, S. M, GILING, L. J

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An analysis of the two electron satellite spectrum of GaAs in high magnetic fields von DRIESSEN, F. A. J. M, LOCHS, H. G. M, OLSTHOORN, S. M, GILING, L. J

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Fermi-edge-induced magnetophotoluminescence in high-carrier-density single heterojunctions von DRIESSEN, F. A. J. M, OLSTHOORN, S. M, BERENDSCHOT, T. T. J. M, GILING, L. J, FRIGO, D. M, JONES, G. A. C, RITCHIE, D. A, FROST, J. E. F

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Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers von Osinniy, V.

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Influence of the 2'-hydroxyl group and of 6-N-methylation on the conformation of adenine dinucleoside monophosphates in solution. A nuclear magnetic resonance and circular dichrois... von Olsthoorn, C S, Doornbos, J, de Leeuw, H P, Altona, C

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High-spatial-resolution photoluminescence measurements on Al x Ga1− x As grown on a nonplanar substrate by metalorganic vapor phase epitaxy von Olsthoorn, S. M., Bongers, M. M. G., Giling, L. J.

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