Modelling of interband transitions in GaAs tunnel diode von Louarn, K, Fontaine, C, Arnoult, A, Olivié, F, Lacoste, G, Piquemal, F, Bounouh, A, Almuneau, G

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Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation von Levillayer, M., Duzellier, S., Massiot, I., Arnoult, A., Nuns, T., Inguimbert, C., Aicardi, C., Parola, S., Olivie, F., Monflier, R., Le Cocq, T., Rey, R., Pons, C., Almuneau, G., Artola, L.

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Influence of the electrical parameters on the input impedance of a fractal structure realised on silicon von Cisse Haba, T., Ablart, G., Camps, T., Olivie, F.

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Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures von Jalabert, L, Temple-Boyer, P, Olivié, F, Sarrabayrouse, G, Cristiano, F, Colombeau, B

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Breakdown properties of metal/NIDOS SiO2/silicon structures von TEMPLE-BOYER, P, OLIVIE, F, SCHEID, E, SARRABAYROUSE, G, ALAY, J. L, MORANTE, J. R

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Design, realization and optimization of a photovoltaic system equipped with analog maximum power point tracking (MPPT) command and detection circuit of the dysfunction and converge... von T. Mrabti

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Electrical characterisation of thin silicon oxynitride films deposited by low pressure chemical vapour deposition von Hajji, B., Temple-Boyer, P., Olivié, F., Martinez, A.

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Amélioration du fonctionnement des systèmes photovoltaïques suite aux brusques variations des conditions météorologiques et de la charge von MRABTI, T, EL OUARIACHI, M, KESSMI, K, OLIVIE, F, BAGUI, F

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Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF2+ ion implantation into silicon von Dusch, A, Marcon, J, Masmoudi, K, Ketata, K, Olivié, F, Benhzora, M, Ketata, M

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Modelling of the influence of charges trapped in the oxide on the I(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures von Aziz, A, Kassmi, K, Kassmi, Ka, Olivie, F

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Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim current injection von Kassmi, K, Aziz, A, Olivie, F

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A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices von Nyamhere, C., Scheinemann, A., Schenk, A., Scheit, A., Olivie, F., Cristiano, F.

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Magnetic susceptibility of P +N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised von Abdelaoui, M., Idrissi-Benzohra, M., Joubert, E., Benzohra, M., Olivié, F., Ketata, M.

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Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures von Aziz, A., Kassmi, K., Maimouni, R., Olivié, F., Sarrabayrouse, G., Martinez, A.

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Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si von Nyamhere, C., Cristiano, F., Olivie, F., Essa, Z., Bedel-Pereira, E., Bolze, D., Yamamoto, Y.

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Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization von Khlifi, Y., Kassmi, K., Aziz, A., Olivie, F.

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Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation von Dusch, A., Marcon, J., Masmoudi, K., Olivié, F., Benzohra, M., Ketata, K., Ketata, M.

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On the use of the matrix pencil method for deep level transient spectroscopy: MP-DLTS von Boussaid, F., Olivie, F., Benzohra, M., Martinez, A.

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Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF 2+ implantation von Dusch, A., Marcon, J., Masmoudi, K., Olivié, F., Benzohra, M., Ketata, K., Ketata, M.

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Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF 2+ ion implantation into silicon von Dusch, A, Marcon, J, Masmoudi, K, Ketata, K, Olivié, F, Benhzora, M, Ketata, M

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