Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs von Krotkus, A., Bertulis, K., Dapkus, L., Olin, U., Marcinkevičius, S.

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Interwell carrier transport in InGaAsP multiple quantum well laser structures von Fröjdh, K., Marcinkevičius, S., Olin, U., Silfvenius, C., Stålnacke, B., Landgren, G.

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Room temperature carrier recombination in InGaAs/GaAs quantum wells von MARCINKEVICIUS, S, OLIN, U, TREIDERIS, G

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Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature von Krotkus, A., Viselga, R., Bertulis, K., Jasutis, V., Marcinkevičius, S., Olin, U.

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Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping von Tessler, N., Marcinkevicius, S., Olin, U., Silfvenius, C.K.V., Stalnacke, B.F., Landgren, G.

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Electron relaxation and capture in InGaAsP quantum well laser structures von Marcinkevičius, S., Olin, U., Wallin, J., Landgren, G.

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Non-thermal photoexcited electron distributions in non-stoichiometric GaAs von Marcinkevicius, S, Krotkus, A, Viselga, R, Olin, U, Jagadish, C

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Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures von Marcinkevičius, S., Hillmer, H., Lösch, R., Olin, U.

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Photoexcited carrier transport in InGaAsP/InP quantum well laser structure von Marcinkevičius, S., Olin, U., Wallin, J., Streubel, K., Landgren, G.

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Femtosecond electron transport in quantum well laser structures with step-graded confinement layers von Marcinkevičius, S., Olin, U., Wallin, J., Streubel, K., Landgren, G.

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Different carrier temperatures in the wells and in the barriers of InGaAs/GaAs single quantum well structures von Marcinkevicius, S, Olin, U

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Interwell Carrier Distribution in InAlGaAs Quantum Well Laser Structures von Marcinkevičius, S., Hillmer, H., Lösch, R., Fröjdh, K., Olin, U.

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Vertical carrier transport in InP-based quantum well laser structures von Marcinkevičius, S., Fröjdh, K., Hillmer, H., Lösch, R., Olin, U.

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Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields von Kavaliauskas, J., Krivaite, G., Galickas, A., Šimkiene, I., Olin, U., Ottosson, M.

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Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells von MARCINKEVICIUS, S, OLIN, U, OTTOSSON, M, TREIDERIS, G, SIMKIENE, I, LIDEIKIS, T

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Electroreflectance studies of InGaAs/GaAs asymmetric step quantum wells von Kavaliauskas, J, Krivaite, G, Lideikis, T, Simkiene, I, Treideris, G, Olin, U, Ottosson, M

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Model for optical bistability in GaAs/AlGaAs Fabry-Perot étalons including diffraction, carrier diffusion, and heat conduction von OLIN, U

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Effects of diffraction and diffusion in dispersive optical bistability in Fabry-Perot étalons von OLIN, U

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Ultrafast photoluminescence decay in low-temperature MOCVD-grown InxGa1-xAs von Krotkus, A, Marcinkevicius, S, Pasiskevicius, V, Olin, U

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Space-charge-induced interband optical nonlinearities in asymmetric coupled quantum wells: Advances in optoelectronics in Europe: the RACE and ESPRIT programmes von FRÖJDH, K, OLIN, U, PLANEL, R

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