MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination von Reddy, M H M, Olesberg, J T, Cao, C, Prineas, J P

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Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces von Goldflam, M. D., Ruiz, I., Howell, S. W., Tauke-Pedretti, A., Anderson, E. M., Wendt, J. R., Finnegan, P., Hawkins, S., Coon, W., Fortune, T. R., Shaner, E. A., Kadlec, C., Olesberg, J. T., Klem, J., Webster, P. T., Sinclair, M. B., Kim, J. K., Peters, D. W., Beechem, T. E.

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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices von Olson, B. V., Murray, L. M., Prineas, J. P., Flatté, M. E., Olesberg, J. T., Boggess, T. F.

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Broadband 2.4 μm superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules von Wootten, M B, Tan, J, Chien, Y J, Olesberg, J T, Prineas, J P

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Room-temperature electron spin relaxation in bulk InAs von Boggess, Thomas F., Olesberg, J. T., Yu, C., Flatté, Michael E., Lau, Wayne H.

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Temperature-Insensitive Near-Infrared Method for Determination of Protein Concentration during Protein Crystal Growth von Olesberg, J. T, Arnold, M. A, Hu, Shih-Yao B, Wiencek, John M

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High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing von Carter, B L, Shaw, E, Olesberg, J T, Chan, W K, Hasenberg, T C, Flatte, M E

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Internal quantum efficiency in 6.1 Å superlattices of 77% for mid-wave infrared emitters von Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

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Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters von Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

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Auger recombination in narrow-gap semiconductor superlattices incorporating antimony von Grein, C. H., Flatté, M. E., Olesberg, J. T., Anson, S. A., Zhang, L., Boggess, T. F.

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Theoretical comparison of mid–wavelength infrared and long–wavelength infrared lasers von Flatté, Michael E., Olesberg, J. T., Grein, C. H.

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Flip Chip Bonding of 68 [Formula Omitted] 68 MWIR LED Arrays von Das, N.C, Taysing-Lara, M, Olver, K.A, Kiamilev, F, Prineas, J.P, Olesberg, J.T, Koerperick, E.J, Murray, L.M, Boggess, T.F

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Flip Chip Bonding of 68 x 68 MWIR LED Arrays von CHANDRA DAS, Naresh, TAYSING-LARA, Monica, ANDERSON OLVER, Kimberley, KIAMILEV, Fouad, PRINEAS, J. P, OLESBERG, J. T, KOERPERICK, E. J, MURRAY, L. M, BOGGESS, Tom F

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Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes von Murray, L. M., Norton, D. T., Olesberg, J. T., Boggess, T. F., Prineas, J. P.

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High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs von Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

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Broadband 2.4 m superluminescent GaInAsSb AlGaAsSb quantum well diodes for optical sensing of biomolecules von Wootten, M B, Tan, J, Chien, Y J, Olesberg, J T, Prineas, J P

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Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer von Anson, S. A., Olesberg, J. T., Flatté, Michael E., Hasenberg, T. C., Boggess, Thomas F.

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Leakage mechanisms and potential performance of molecular-beam epitaxially grown GaInAsSb 2.4   μ m photodiode detectors von Prineas, J. P., Yager, J., Seyedmohamadi, S., Olesberg, J. T.

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Flip Chip Bonding of 68 \times 68 MWIR LED Arrays von Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.

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Comparison of linewidth enhancement factors in midinfrared active region materials von Olesberg, J. T., Flatté, Michael E., Boggess, Thomas F.

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