Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory von Kay, Matthew J., Gadlage, Matthew J., Duncan, Adam R., Ingalls, David, Howard, Andrew, Oldham, Timothy R.

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Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure von Oldham, T. R., Dakai Chen, Friendlich, M. R., LaBel, K. A.

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Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory von Oldham, T. R., Friendlich, M. R., Wilcox, E. P., LaBel, K. A., Buchner, S. P., McMorrow, D., Mavis, D. G., Eaton, P. H., Castillo, J.

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Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies von Pellish, Jonathan A, Xapsos, Michael A, Stauffer, Craig A, Jordan, Thomas M, Sanders, Anthony B, Ladbury, Raymond L, Oldham, Timothy R, Marshall, Paul W, Heidel, David F, Rodbell, Kenneth P

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Flash Photolysis of Sensitizers in Microbes von Oldham, Timothy C, Phillips, David

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Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA von Cochran, Donna J, Dakai Chen, Oldham, Timothy R, Sanders, Anthony B, Kim, Hak S, Campola, Michael J, Buchner, Stephen P, LaBel, Kenneth A, Marshall, Cheryl J, Pellish, Jonathan A, Carts, Martin A, O'Bryan, Martha V

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Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance von Oldham, Timothy, Casady, Janna, Das, Hrishikesh, Sunkari, Swapna, Rodgers, Josh

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Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA von O'Bryan, Martha V, LaBel, Kenneth A, Pellish, Jonathan A, Dakai Chen, Lauenstein, Jean-Marie, Marshall, Cheryl J, Ladbury, Ray L, Oldham, Timothy R, Kim, Hak S, Phan, Anthony M, Berg, Melanie D, Carts, Martin A, Sanders, Anthony B, Buchner, Stephen P, Marshall, Paul W, Xapsos, Michael A, Irom, Farokh, Pearce, Larry G, Thomson, Eric T, Bernard, Theju M, Satterfield, Harold W, Williams, Alan P, van Vonno, Nick W, Salzman, James F, Burns, Sam, Albarian, Rafi S

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Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory von Oldham, T.R., Friendlich, M., Carts, M.A., Seidleck, C.M., LaBel, K.A.

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High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC von Casady, Janna R. B., Das, Hrishikesh, Casady, Jeff B., Sunkari, Swapna G., Oldham, Timothy

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Radiation Test Challenges for Scaled Commercial Memories von LaBel, K.A., Ladbury, R.L., Cohn, L.M., Oldham, T.R.

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TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission von Oldham, T.R., Friendlich, M.R., Sanders, A.B., Seidleck, C.M., Kim, H.S., Berg, M.D., LaBel, K.A.

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Effects of heavy ion exposure on nanocrystal nonvolatile memory von Oldham, T.R., Suhail, M., Kuhn, P., Prinz, E., Kim, H.S., LaBel, K.A.

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Time dependence of switching oxide traps von Lelis, A.J., Oldham, T.R.

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2001 Nuclear and Space Radiation Effects Conference (NSREC 2001) von Oldham, Timothy R.

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LINKING RECEPTOR OCCUPANCY TO EFFICACY OF CXCR4 ANTAGONISTS von ORGAN, Louise, GAO, Jie, LYNCH, Jason, OLDHAM, Timothy

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Guest Editor’s Comments

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Electrostatic as well as hydrophobic interactions are important for the association of Cpn60 (groEL) with peptides von Hutchinson, Jonathan P., Oldham, Timothy C., El-Thaher, Talal S. H., Miller, Andrew D.

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Investigation of Current Spike Phenomena during Heavy Ion Irradiation of NAND Flash Memories von Oldham, Timothy R., Berg, M., Friendlich, M., Wilcox, T., Seidleck, C., LaBel, K. A., Irom, F., Buchner, S. P., McMorrow, D., Mavis, D. G., Eaton, P. H., Castillo, J.

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Scaling and single event effects (SEE) sensitivity von Oldham, Timothy R

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