Homogeneous photonic integration of mid-infrared quantum cascade lasers with low-loss passive waveguides on an InP platform von Jung, Seungyong, Palaferri, Daniele, Zhang, Kevin, Xie, Feng, Okuno, Yae, Pinzone, Christopher, Lascola, Kevin, Belkin, Mikhail A.

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Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping von Geske, J., Gan, K.-G., Okuno, Y.L., Piprek, J., Bowers, J.E.

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MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth von Dong, Yingda, Okuno, Yae L., Mishra, Umesh K.

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3-D photonic circuit technology von Raburn, M., Bin Liu, Rauscher, K., Yae Okuno, Dagli, N., Bowers, J.E.

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Direct wafer bonding of a (001) InP-based strained multiple quantum well on a (110) Si substrate with a GaAs buffer layer, aligning cleavage planes of InP and Si von OKUNO, Y, TAMURA, M

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Electrical properties of orientation-mismatched interface of (311)B InP/(100) GaAs, and the effect of surface preparation methods von Okuno, Y.L., Bowers, J.E.

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An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVD von Okuno, Y.L., DenBaars, S.P., Bowers, J.E.

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Investigation on direct bonding of III–V semiconductor wafers with lattice mismatch and orientation mismatch von Okuno, Yae

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Vertical and lateral heterogeneous integration von Geske, Jon, Okuno, Yae L., Bowers, John E., Jayaraman, Vijay

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Invited Paper: Surface-emitting-diode lasers and laser arrays for displays von Mooradian, Aram, Carey, Glen, Carico, Renata, Dato, Rene, Dudley, James, Giaretta, Giorgio, Hallstein, Sascha, Hofler, Jurgen, Hu, Frank, Jansen, Mitch, Kocot, Christopher, Krueger, Joachim, Lim, Sui, McKinnon, Neil, Niven, Greg, Okuno, Yae, Tandon, Ashish, Umbrasas, Arvydas

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Threading dislocation reduction in InP on GaAs by thin strained interlayer and its application to the fabrication of 1.3-μm-wavelength laser on GaAs von OKUNO, Y, KAWANO, T, TSUCHIYA, T, TANIWATARI, T

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Long-wavelength two-dimensional WDM vertical cavity surface-emitting laser arrays fabricated by nonplanar wafer bonding von Geske, J., Okuno, Y.L., Leonard, D., Bowers, J.E.

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1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control von Okuno, Yae L., Geske, Jon, Gan, Kian-Giap, Chiu, Yi-Jen, DenBaars, Steven P., Bowers, John E.

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High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication von Okuno, Yae L., DenBaars, Steven P., Bowers, John E.

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Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration von Okuno, Y., Uomi, K., Aoki, M., Tsuchiya, T.

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Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-µm-Wavelength Laser on GaAs von Okuno, Yae, Kawano, Toshihiro, Tomonobu Tsuchiya, Tomonobu Tsuchiya, Tsuyoshi Taniwatari, Tsuyoshi Taniwatari

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InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer von Raburn, M., Bin Liu, Okuno, Y., Bowers, J.E.

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Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates von Okuno, Yae, Kawano, Toshihiro, Koguchi, Masanari, Nakamura, Kuniyasu, Kakibayashi, Hiroshi

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NITRIDE BASED III-V COMPOUND SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE von OKUNO YAE, TSUKADA TOSHIHISA

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SEMICONDUCTOR DEVICE AND ITS MANUFACTURE von KONO TOSHIHIRO, OKUNO YAE

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