Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti von Okojie, R. S., Lukco, D.

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High-temperature electronics - a role for wide bandgap semiconductors? von Neudeck, P.G., Okojie, R.S., Liang-Yu Chen

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Characterization of tungsten-nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC von Kragh-Buetow, K C, Okojie, R S, Lukco, D, Mohney, S E

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Ni-based microvalves for flow modulation: Toward active combustion control von Chang, C.W., Okojie, R.S.

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Thermal and doping dependence of 4H-SiC polytype transformation von Brillson, L. J., Tumakha, S., Jessen, G. H., Okojie, R. S., Zhang, M., Pirouz, P.

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Chemical Analysis of Materials Exposed to Venus Temperature and Surface Atmosphere von Lukco, D., Spry, D. J., Harvey, R. P., Costa, G. C. C., Okojie, R. S., Avishai, A., Nakley, L. M., Neudeck, P. G., Hunter, G. W.

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Inelastic Stress Relaxation in Single Crystal SiC Substrates von Okojie, Robert S.

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Electron-excited luminescence of SiC surfaces and interfaces von Brillson, L J, Tumakha, S, Okojie, R S, Zhang, M, Pirouz, P

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Characterization of highly doped n- and p-type 6H-SiC piezoresistors von Okojie, R.S., Ned, A.A., Kurtz, A.D., Carr, W.N.

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Simulation, fabrication and testing of bulk micromachined 6H-SiC high- g piezoresistive accelerometers von Atwell, Andrew R., Okojie, Robert S., Kornegay, Kevin T., Roberson, Scott L., Beliveau, Alain

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Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques von Okojie, Robert S., Dudley, Michael, Huang, X., Cho, W., Neudeck, Philip G.

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SiC Studied Via LEEN and Cathodoluminescence Spectroscopy von Zhang, M., Pirouz, P., Okojie, Robert S., Tumakha, Sergey P., Brillson, Leonard J.

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Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H–SiC von Tumakha, S., Brillson, L. J., Jessen, G. H., Okojie, R. S., Lukco, D., Zhang, M., Pirouz, P.

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An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center von Hunter, Gary W, Neudeck, Philip G, Okojie, Robert S, Beheim, Glenn M, Powell, J. A, Chen, Liangyu

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Electronic defect states at annealed metal∕4H–SiC interfaces von Tumakha, S., Goss, S. H., Brillson, L. J., Okojie, R. S.

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Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers von Zhang, M., Pirouz, P., Okojie, Robert S.

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A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C von Okojie, Robert S., Evans, Laura J., Lukco, Dorothy, Morris, Joseph P.

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Electrical characterization of annealed Ti/TiN/Pt contacts on N-type 6H-SiC epilayer von Okojie, R.S., Ned, A.A., Kurtz, A.D., Carr, W.N.

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A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 [Formula Omitted] von Okojie, R. S, Evans, L. J, Lukco, D, Morris, J. P

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A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 [compfn] hbox C von Okojie, R S, Evans, L J, Lukco, D, Morris, J P

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