A novel HBT distributed amplifier design topology based on attenuation compensation techniques von Kobayashi, K.W., Esfandiari, R., Oki, A.K.

Volltext

GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications von Kim, M.E., Oki, A.K., Gorman, G.M., Umemoto, D.K., Camou, J.B.

Volltext

Ultrahigh-speed direct digital synthesizer using InP DHBT technology von Gutierrez-Aitken, A., Matsui, J., Kaneshiro, E.N., Oyama, B.K., Sawdai, D., Oki, A.K., Streit, D.C.

Volltext

Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3 von Kehias, L., Jenkins, T., Quach, T., Watson, P., Welch, R., Worley, R., Oki, A.K., Yen, H.C., Gutierrez-Aitken, A., Okamura, W., Kaneshiro, E.

Volltext

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth von Kobayashi, K.W., Oki, A.K., Tran, L.T., Cowles, J.C., Gutierrez-Aitken, A., Yamada, F., Block, T.R., Streit, D.C.

Volltext

Monolithic HEMT-HBT integration by selective MBE von Streit, D.C., Umemoto, D.K., Kobayashi, K.W., Oki, A.K.

Volltext

Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches von Kobayashi, K.W., Oki, A.K., Umemoto, D.K., Claxton, S.K.Z., Streit, D.C.

Volltext

Ultrahigh-efficiency power amplifier for space radar applications von Quach, T.K., Watson, P.M., Okamura, W., Kaneshiro, E.N., Gutierrez-Aitken, A., Block, T.R., Eldredge, J.W., Jenkins, T.J., Kehias, L.T., Oki, A.K., Sawdai, D., Welch, R.J., Worley, R.D.

Volltext

A novel monolithic HBT-p-i-n-HEMT integrated circuit with HBT active feedback and p-i-n diode variable gain control von Kobayashi, K.W., Streit, D.C., Umemoto, D.K., Oki, A.K.

Volltext

Future technologies for commercial and defense telecommunication electronics von Oki, A.K., Streit, D.C., Lai, R., Kobayashi, K.W., Gutierrez-Aitken, A., Block, T.

Volltext bestellen

Digital signal processing - up to microwave frequencies von Asbeck, P., Galton, I., Keh-Chung Wang, Jensen, J.F., Oki, A.K., Chang, C.T.M.

Volltext

A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier von Kobayashi, K.W., Umemoto, D.K., Block, T.R., Oki, A.K., Streit, D.C.

Volltext

Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads von Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Oki, A.K., Streit, D.C.

Volltext

A W-band source module using MMIC's von Wang, Huei, Kwo Wei Chang, Smith, D., Dow, G.S., Tan, K.L., Oki, A.K., Allen, B.R.

Volltext

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts von Streit, D.C., Oki, A.K., Umemoto, D.K., Velebir, J.R., Stolt, K.S., Yamada, F.M., Saito, Y., Hafizi, M.E., Bui, S., Tran, L.T.

Volltext

High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates von Chou, Y C, Leung, D L, Biedenbender, M, Eng, D C, Buttari, D, Mei, X B, Lin, C H, Tsai, R S, Lai, R, Barsky, M E, Wojtowicz, M, Oki, A K, Block, T R

Volltext

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications von Chou, Y C, Leung, D L, Biedenbender, M, Buttari, D, Eng, D C, Tsai, R S, Lin, C H, Lee, L S, Mei, X B, Wojtowicz, M, Barsky, M E, Lai, R, Oki, A K, Block, T R

Volltext

Experimental study of AlGaAs/GaAs HBT device design for power applications von Hafizi, M., Streit, D.C., Tran, L.T., Kobayashi, K.W., Umemoto, D.K., Oki, A.K., Wang, S.K.

Volltext

Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology von Wang, Huei, Kwo Wei Chang, Tran, L.T., Cowles, J.C., Block, T.R., Lin, E.W., Dow, G.S., Oki, A.K., Streit, D.C., Allen, B.R.

Volltext

Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors von Song, Y., Kim, M.E., Oki, A.K., Hafizi, M.E., Murlin, W.D., Camou, J.B., Kobayashi, K.W.

Volltext