3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity von Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices von Alhasani, Reem, Yabe, Taichi, Iyama, Yutaro, Oi, Nobutaka, Imanishi, Shoichiro, Nguyen, Quang Ngoc, Kawarada, Hiroshi

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Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation von Oi, Nobutaka, Kudo, Takuya, Inaba, Masafumi, Okubo, Satoshi, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors von Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications von Syamsul, Mohd, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Kawarada, Hiroshi

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Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing von Falina, Shaili, Kawai, Sora, Oi, Nobutaka, Yamano, Hayate, Kageura, Taisuke, Suaebah, Evi, Inaba, Masafumi, Shintani, Yukihiro, Syamsul, Mohd, Kawarada, Hiroshi

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Over 1 A Operation of Vertical-Type Diamond MOSFETs von Oi, Nobutaka, Okubo, Satoshi, Tsuyuzaki, Ikuto, Hiraiwa, Atsushi, Kawarada, Hiroshi

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(111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures von Tsunoda, Jun, Iwataki, Masayuki, Oi, Nobutaka, Morishita, Aoi, Hiraiwa, Astushi, Kawarada, Hiroshi

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Application of 2DHG Diamond p-FET in Cascode With Normally-OFF Operation and a Breakdown Voltage of Over 1.7 kV von Bi, Te, Niu, Junxiong, Oi, Nobutaka, Inaba, Masafumi, Sasaki, Toshio, Kawarada, Hiroshi

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Over 12000 A/cm2 and 3.2 m \Omega cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET von Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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3.8 W/mm RF Power Density for ALD Al 2 O 3 -Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity von Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Over 12000 A/cm 2 and 3.2 m$\Omega$ cm 2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET von Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Over 12000 A/cm2 and 3.2 m[Formula Omitted]cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET von Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Development of Vertical-type 2DHG Diamond MOSFET towards Realization of High Power P-type MOSFET von Nishimura, Jun, Iwataki, Masayuki, Oi, Nobutaka, Hiraiwa, Atsushi, Kawarada, Hiroshi

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(111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures von Niikura, Naoya, Nishimura, Jun, Iwataki, Masayuki, Oi, Nobutaka, Morishita, Aoi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Vertical-type 2DHG Diamond MOSFET ; Achievement of High Drain Current Operation (~1 A) by Gate Width 10 mm von Nishimura, Jun, Oi, Nobutaka, Iwataki, Masayuki, Tsuyuzaki, Ikuto, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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High frequency performance evaluation of (111) diamond MOSFETs for complementary RF power amplifiers application von Kudara, Ken, Imanishi, Shoichiro, Oi, Nobutaka, Okubo, Satoshi, Horikawa, Kiyotaka, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Evaluation of high frequency performance of ALD-Al2O3 2DHG diamond MOSFET for high power at high voltage operation von Imanishi, Shoichiro, Oi, Nobutaka, Kudo, Takuya, Okubo, Satoshi, Horikawa, Kiyotaka, Hiraiwa, Atsushi, Kawarada, Hiroshi

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High on-current density and low on-resistance in Vertical-Type 2DHG Diamond MOSFET with Overlapping Gate Electrode Structure von Nishimura, Jun, Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shoutaro, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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3.8 W/mm Output Power Density at 1 GHz by 2DHG Diamond MOSFETs von Kudara, Ken, Imanishi, Shoichiro, Oi, Nobutaka, Okubo, Satoshi, Horikawa, Kiyotaka, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

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