Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs von Kadoshima, M., Matsuki, T., Miyazaki, S., Shiraishi, K., Chikyo, T., Yamada, K., Aoyama, T., Nara, Y., Ohji, Y.

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Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures von Shimizu, Y., Kawamura, Y., Uematsu, M., Tomita, M., Kinno, T., Okada, N., Kato, M., Uchida, H., Takahashi, M., Ito, H., Ishikawa, H., Ohji, Y., Takamizawa, H., Nagai, Y., Itoh, K. M.

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Flat adenoma-carcinoma sequence with high-malignancy potential as demonstrated by CD10 and β-catenin expression: a different pathway from the polypoid adenoma-carcinoma sequence von Koga, Y, Yao, T, Hirahashi, M, Kumashiro, Y, Ohji, Y, Yamada, T, Tanaka, M, Tsuneyoshi, M

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Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control von Mise, N., Morooka, T., Eimori, T., Ono, T., Sato, M., Kamiyama, S., Nara, Y., Ohji, Y.

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Capsule endoscopy findings in intestinal follicular lymphoma von Esaki, M., Matsumoto, T., Nakamura, S., Suekane, H., Ohji, Y., Yao, T., Iida, M.

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Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current von Sonoda, K., Tanizawa, M., Shimizu, S., Araki, Y., Kawai, S., Ogura, T., Kobayashi, S., Ishikawa, K., Eimori, T., Inoue, Y., Ohji, Y., Kotani, N.

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Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region von Morooka, T, Sato, M, Matsuki, T, Suzuki, T, Shiraishi, K, Uedono, A, Miyazaki, S, Ohmori, K, Yamada, K, Nabatame, T, Chikyow, T, Yugami, J, Ikeda, K, Ohji, Y

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Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation von Nakamura, Shotaro, Ye, Hongtao, Bacon, Chris M, Goatly, Alison, Liu, Hongxiang, Banham, Alison H, Ventura, Roland, Matsumoto, Takayuki, Iida, Mitsuo, Ohji, Yutaka, Yao, Takashi, Tsuneyoshi, Masazumi, Du, Ming-Qing

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Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric] von Matsui, Y., Torii, K., Hirayama, M., Fujisaki, Y., Iijima, S., Ohji, Y.

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Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams von Uedono, A., Wei, L., Tanigawa, S., Suzuki, R., Ohgaki, H., Mikado, T., Kawano, T., Ohji, Y.

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Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control von Tsuchiya, R., Horiuchi, M., Kimura, S., Yamaoka, M., Kawahara, T., Maegawa, S., Ipposhi, T., Ohji, Y., Matsuoka, H.

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Probe EUS for the diagnosis of invasion depth in superficial esophageal cancer: a comparison between a jelly-filled method and a water-filled balloon method von Esaki, Motohiro, MD, Matsumoto, Takayuki, MD, Moriyama, Tomohiko, MD, Hizawa, Kazuoki, MD, Ohji, Yutaka, MD, Nakamura, Shotaro, MD, Hirakawa, Katsuya, MD, Hirahashi, Minako, MD, Yao, Takashi, MD, Iida, Mitsuo, MD

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Simulation of Drain Current Reduction Caused by Process-Induced Stress von Uchida, T., Takashino, H., Tanizawa, M., Okagaki, T., Ishikawa, K., Eimori, T., Ohji, Y.

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Hot-electron hardened Si-gate MOSFET utilizing F implantation von Nishioka, Y., Ohyu, K., Ohji, Y., Natuaki, N., Mukai, K., Ma, T.-P.

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Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control von Mise, N, Morooka, T, Eimori, T, Ono, T, Sato, M, Kamiyama, S, Nara, Y, Ohji, Y

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Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures von Shimizu, Y., Kawamura, Y., Uematsu, M., Tomita, M., Kinno, T., Okada, N., Kato, M., Uchida, H., Takahashi, M., Ito, H., Ishikawa, H., Ohji, Y., Takamizawa, H., Nagai, Y., Itoh, K. M.

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Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- k FETs von Ootsuka, F., Katakami, A., Shirai, K., Watanabe, T., Nakata, H., Kitajima, M., Aoyama, T., Eimori, T., Nara, Y., Ohji, Y., Tanjyo, M.

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Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integration von SHIMIZU, K, KATAYAMA, M, FUNAKI, H, ARAI, E, NAKATA, M, OHJI, Y, IMURA, R

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Positron annihilation in SiO2/Si structure at low temperature von Uedono, A., Moriya, T., Tanigawa, S., Kawano, T., Ohji, Y.

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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs von Kadoshima, M, Matsuki, T, Miyazaki, S, Shiraishi, K, Chikyo, T, Yamada, K, Aoyama, T, Nara, Y, Ohji, Y

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