Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm von Mitsuhara, M., Ohiso, Y., Matsuzaki, H.

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1.3-µm buried-heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD von Ohiso, Y, Sato, T, Shindo, T, Matsuzaki, H

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[011] waveguide stripe direction n-i-p-n heterostructure InP optical modulator von Ogiso, Y, Ohiso, Y, Shibata, Y, Kohtoku, M

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100 Gb/s and 2 V Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure von Ogiso, Y, Ozaki, J, Kashio, N, Kikuchi, N, Tanobe, H, Ohiso, Y, Kohtoku, M

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4-nm continuous rapid sweeping spectroscopy in 2-μm band using distributed Bragg reflector laser von Abe, M., Kanai, T., Fujiwara, N., Ohiso, Y., Ishii, H., Shimokozono, M., Mastuzaki, H., Kasahara, R., Itoh, M.

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Fast tunable optical filter using cascaded Mach-Zehnder Interferometers with apodized sampled gratings von Segawa, T., Matsuo, S., Ohiso, Y., Ishii, T., Shibata, Y., Suzuki, H.

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A widely tunable optical filter using ladder-type structure von Matsuo, S., Yoshikuni, Y., Segawa, T., Ohiso, Y., Okamoto, H.

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Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers von Ohiso, Y., Okamoto, H., Iga, R., Kishi, K., Amano, C.

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Apodised sampled grating using InGaAsP/InP deep-ridge waveguide with vertical-groove surface grating von Segawa, T., Matsuo, S., Ohiso, Y., Ishii, T., Suzuki, H.

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100 Gb/s and 2 V V sub([pi]) InP Mach-Zehnder modulator with an n-i-p-n heterostructure von Ogiso, Y, Ozaki, J, Kashio, N, Kikuchi, N, Tanobe, H, Ohiso, Y, Kohtoku, M

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Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition von Tateno, K., Ohiso, Y., Amano, C., Wakatsuki, A., Kurokawa, T.

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Chirped ladder-type interferometric filter for widely tunable laser diode von Jeong, S.-H., Matsuo, S., Yoshikuni, Y., Segawa, T., Ohiso, Y., Suzuki, H.

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Long-wavelength (1.55-/spl mu/m) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion von Ohiso, Y., Amano, C., Itoh, Y., Takenouchi, H., Kurokawa, T.

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Polarization-controlled 850-nm-wavelength vertical-cavity surface-emitting lasers grown on [311]B substrates by metal-organic chemical vapor deposition von Uenohara, H., Tateno, K., Kagawa, T., Ohiso, Y., Tsuda, H., Kurokawa, T., Amano, C.

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1.55-μm buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs on a GaAs substrate von OHISO, Yoshitaka, OKAMOTO, Hiroshi, IGA, Ryuzo, KISHI, Kenji, TATENO, Kouta, AMANO, Chikara

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Investigation of dynamic polarization stability of 850-nm GaAs-based vertical-cavity surface-emitting lasers grown on [311]B and [100] substrates von Uenohara, H., Tateno, K., Kagawa, T., Ohiso, Y., Tsuda, H., Kurokawa, T., Amano, C.

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Monolithically integrated photonic switching device using an MSM PD, MESFETs, and a VCSEL von Matsuo, S., Nakahara, T., Kohama, Y., Ohiso, Y., Fukushima, S., Kurokawa, T.

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High performance of 1.55-μm buried-heterostructure vertical-cavity surface-emitting lasers von Ohiso, Y., Okamoto, H., Iga, R., Kishi, K., Tateno, K., Amano, C.

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Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs von Ohiso, Y, Iga, R, Kishi, K, Amano, C

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Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate von Ohiso, Y., Tateno, K., Kohama, Y., Wakatsuki, A., Tsunetsugu, H., Kurokawa, T.

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