Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model von Higashi, Yusuke, Momo, Nobuyuki, Sasaki, Hiroki, Momose, Hisayo Sasaki, Ohguro, Tatsuya, Mitani, Yuichiro, Ishihara, Takamitsu, Matsuzawa, Kazuya

Volltext

Impact of Plasma‐Damaged‐Layer Removal on GaN HEMT Devices von Kodera, Masako, Yoshioka, Akira, Sugiyama, Toru, Ohguro, Tatsuya, Hamamoto, Takeshi, Kawamoto, Tatsuyoshi, Yamanaka, Tatsuya, Xinyu, Zhang, Lester, Steve, Miyashita, Naoto

Volltext

Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits von OHGURO, Tatsuya, INABA, Satoshi, KANEKO, Akio, OKANO, Kimitoshi

Volltext

Special Section on the 2010 International Conference on Microelectronic Test Structures von Ohguro, Tatsuya

Volltext

NiSi salicide technology for scaled CMOS von IWAI, Hiroshi, OHGURO, Tatsuya, OHMI, Shun-Ichiro

Volltext

Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications von Miyake, Masataka, Sadachika, Norio, Navarro, Dondee, Mizukane, Yoshio, Matsumoto, Kenji, Ezaki, Tatsuya, Miura-Mattausch, Mitiko, Mattausch, Hans Juergen, Ohguro, Tatsuya, Iizuka, Takahiro, Taguchi, Masahiko, Kumashiro, Shigetaka, Miyamoto, Shunsuke

Volltext

CAPACITOR von OHGURO, Tatsuya

Volltext bestellen

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors von MIYAKE, Masataka, HORI, Daisuke, SADACHIKA, Norio, FELDMANN, Uwe, MIURA-MATTAUSCH, Mitiko, MATTAUSCH, Hans Jürgen, OHGURO, Tatsuya, IIZUKA, Takahiro, TAGUCHI, Masahiko, MIYAMOTO, Shunsuke

Volltext

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation von Miura-Mattausch, M., Sadachika, N., Navarro, D., Suzuki, G., Takeda, Y., Miyake, M., Warabino, T., Mizukane, Y., Inagaki, R., Ezaki, T., Mattausch, H.J., Ohguro, T., Iizuka, T., Taguchi, M., Kumashiro, S., Miyamoto, S.

Volltext

Channel noise enhancement in small geometry MOSFET and its influence on phase noise calculation of integrated voltage-controlled oscillator von Itoh, Nobuyuki, Kojima, Kenji, Ohguro, Tatsuya

Volltext

SEMICONDUCTOR DEVICE von OHGURO, Tatsuya

Volltext bestellen

Isolator von Ohguro, Tatsuya

Volltext bestellen

Isolator von Ohguro, Tatsuya

Volltext bestellen

ISOLATOR von OHGURO, Tatsuya

Volltext bestellen

A creep-immune electrostatic actuator for RF-MEMS tunable capacitor von Ogawa, Etsuji, Ikehashi, Tamio, Saito, Tomohiro, Yamazaki, Hiroaki, Masunishi, Kei, Tomizawa, Yasushi, Ohguro, Tatsuya, Sugizaki, Yoshiaki, Toyoshima, Yoshiaki, Shibata, Hideki

Volltext

ISOLATOR von OHGURO, Tatsuya

Volltext bestellen

SEMICONDUCTOR DEVICE von FUJINO, Yuhki, OHGURO, Tatsuya

Volltext bestellen

1.5 nm direct-tunneling gate oxide Si MOSFET's von Sasaki, H., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., Iwai, H.

Volltext

An intelligent bipolar actuation method with high stiction immunity for RF MEMS capacitive switches and variable capacitors von Yamazaki, Hiroaki, Ikehashi, Tamio, Ohguro, Tatsuya, Ogawa, Etsuji, Kojima, Kenji, Ishimaru, Kazunari, Ishiuchi, Hidemi

Volltext

The impact of scaling down to deep submicron on CMOS RF circuits von Huang, Q., Piazza, F., Orsatti, P., Ohguro, T.

Volltext