Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation von Offsey, S.D., Schaff, W.J., Lester, L.F., Eastman, L.F., McKernan, S.K.

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Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers von Offsey, S.D., Shcaff, W.J., Tasker, P.J., Eastman, L.F.

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High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching von Lester, L.F., Schaff, W.J., Offsey, S.D., Eastman, L.F.

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Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy von Offsey, S.D., Schaff, W.J., Tasker, P.J., Eastman, L.F.

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Strained GaLnAs Quantum Well Lasers Grown By Molecular Beam Epitaxy For Improved Microwave Frequency Modulation Bandwidths von Schaff, W.J., Offsey, S.D., Lester, L.F., Eastman, L.F.

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High-speed short cavity strained-layer multiple quantum well lasers von Lester, L.F., Schaff, W.J., Song, X., Offsey, S.D., Eastman, L.F.

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